BSC097N06NSATMA1 vs BSZ017NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of BSC097N06NSATMA1 by Infineon and BSZ017NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 ✓ Active

Specification Comparison

Parameter BSC097N06NSATMA1 BSZ017NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] —
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
Operating Junction Temperature -55C to +150C -55°C to +150°C
Package / Case PG-TDSON-8-6 (SuperSO8 5x6 mm) —
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) —
RoHS Status Compliant Compliant
MSL Level 1 (Unlimited) —
Avalanche Rated Yes (EAS per datasheet) —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (TA) — 27 A
Continuous Drain Current (TC) — 40 A
On-Resistance RDS(on) @ VGS=10V — 1.7 mΩ
On-Resistance Test Current — 20 A
Gate-Source Voltage (VGS) Rating — ±16 V
Gate Threshold Voltage VGS(th) — 2 V @ 250 µA
Total Gate Charge Qg — 30 nC @ VGS=10V
Input Capacitance Ciss — 2000 pF @ VDS=12V
Power Dissipation (TA) — 2.1 W
Power Dissipation (TC) — 50 W
Package — PG-TSDSON-8-FL (8-PowerTDFN)
Series / Family — OptiMOS 5 25V

Datasheets & Resources

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