BSC120N03LSGATMA1 vs BSC030N03LSGATMA1 Comparação
Comparação detalhada lado a lado de BSC120N03LSGATMA1 por Infineon e BSC030N03LSGATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | BSC120N03LSGATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,36 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 12 A | — |
| Continuous Drain Current (ID) at Tc=25C | 39 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | — |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 28 W | — |
| Faixa de temperatura de operação | -55C to +150C (TJ) | — |
| Encapsulamento | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | — | 23 A |
| RDS(on) Max @ VGS=10V | — | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | — | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | — | 55 nC |
| Output Charge (Qoss) | — | 66 pF |
| Input Capacitance (Ciss) Typ | — | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | — | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | — | 69 W |
| Temperatura de junção de operação | — | -55C to +150C |
| Avalanche Rated | — | Yes (100% tested) |