BSC120N03LSGATMA1 vs BSC030N03LSGATMA1 Comparison
Detailed side-by-side comparison of BSC120N03LSGATMA1 by Infineon and BSC030N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 β Active
Specification Comparison
| Parameter | BSC120N03LSGATMA1 | BSC030N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 12 A | β |
| Continuous Drain Current (ID) at Tc=25C | 39 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | β |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 28 W | β |
| Operating Temperature Range | -55C to +150C (TJ) | β |
| Package | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 100 A |
| Continuous Drain Current (Id) @ Ta=25C | β | 23 A |
| RDS(on) Max @ VGS=10V | β | 3 mOhm |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (Vgs th) Typ | β | 2.2 V |
| Gate Charge (Qg) Typ @ VGS=15V | β | 55 nC |
| Output Charge (Qoss) | β | 66 pF |
| Input Capacitance (Ciss) Typ | β | 4.3 nF |
| Power Dissipation (Pd) @ Ta=25C | β | 2.5 W |
| Power Dissipation (Pd) @ Tc=25C | β | 69 W |
| Operating Junction Temperature | β | -55C to +150C |
| Avalanche Rated | β | Yes (100% tested) |