BSP89H6327XTSA1 vs BSP125H6327XTSA1 Comparação
Comparação detalhada lado a lado de BSP89H6327XTSA1 por Infineon e BSP125H6327XTSA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSP89H6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,39 | $0,38 |
| Tipo de transistor | N-Channel MOSFET, enhancement mode | N-Channel MOSFET |
| Technology | SIPMOS (planar power MOS) | SIPMOS (Small Signal Power MOSFET) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 240 V (VGS=0, ID=250 µA) | — |
| Continuous Drain Current (ID) at Ta=25°C | 0.35 A | — |
| Total Power Dissipation (Ptot) at Ta=25°C | 1.8 W (on FR4 PCB, 6 cm² cooling area) | — |
| On-State Resistance (RDS(on)) max | 6 Ω (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical value] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Faixa de temperatura de operação | -55 °C to +150 °C (Tj) | — |
| Thermal Resistance Junction-Ambient (RthJA) | 70 K/W (6 cm² PCB) | — |
| Thermal Resistance Junction-Solder Point (RthJS) | 25 K/W | — |
| Encapsulamento | PG-SOT223-4 (SOT-223, 4-pin with tab) | PG-SOT223-4 (SOT-223-3 + tab) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (logic-level compatible) | — |
| dv/dt Rated | Yes | — |
| ESD Protection | Internal gate-source Zener | — |
| Automotive Qualification | AEC-Q101 (per ordering code H6327) | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSP125H6327XTSA1 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Temperatura de operação | — | -55C to +150C (TJ) |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |
| Nível MSL | — | 1 (Unlimited) |
| Qualification | — | Automotive / Industrial grade |