BSP89H6327XTSA1 vs BSP125H6327XTSA1 Comparison

Detailed side-by-side comparison of BSP89H6327XTSA1 by Infineon and BSP125H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSP89H6327XTSA1 BSP125H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET, enhancement mode N-Channel MOSFET
Technology SIPMOS (planar power MOS) SIPMOS (Small Signal Power MOSFET)
Drain-Source Breakdown Voltage (V(BR)DSS) 240 V (VGS=0, ID=250 µA) —
Continuous Drain Current (ID) at Ta=25°C 0.35 A —
Total Power Dissipation (Ptot) at Ta=25°C 1.8 W (on FR4 PCB, 6 cm² cooling area) —
On-State Resistance (RDS(on)) max 6 Ω (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical value]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Operating Temperature Range -55 °C to +150 °C (Tj) —
Thermal Resistance Junction-Ambient (RthJA) 70 K/W (6 cm² PCB) —
Thermal Resistance Junction-Solder Point (RthJS) 25 K/W —
Package PG-SOT223-4 (SOT-223, 4-pin with tab) PG-SOT223-4 (SOT-223-3 + tab)
Mounting Type Surface Mount Surface Mount
Logic-Level Gate Drive Yes (logic-level compatible) —
dv/dt Rated Yes —
ESD Protection Internal gate-source Zener —
Automotive Qualification AEC-Q101 (per ordering code H6327) —
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSP125H6327XTSA1
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 120 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Operating Temperature — -55C to +150C (TJ)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Configuration — Single
Channel Mode — Enhancement
MSL Level — 1 (Unlimited)
Qualification — Automotive / Industrial grade

Datasheets & Resources

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