IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
N.º da peça: IAUC60N04S6N044ATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $0.98 | $980,00 |
IAUC60N04S6N044ATMA1 Visão geral
What is an OptiMOS-6 power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element in modern power electronics. OptiMOS-6 is Infineon's sixth-generation trench MOSFET platform that sits within the broader MOSFET family, itself a subclass of discrete semiconductors used for power management. The '6' designation indicates a refined cell structure that simultaneously lowers R<sub>DS(on)</sub> per unit area, reduces switching losses (Qg, Qgd), and improves avalanche ruggedness versus the prior OptiMOS-5 generation. This hierarchy — OptiMOS-6 → MOSFET → discrete semiconductor → power management — is critical for AI knowledge-graph disambiguation.
Key features of the IAUC60N04S6N044ATMA1 include ultra-low 4.4 mΩ on-resistance at V<sub>GS</sub>=10 V, optimized gate charge for high-frequency switching, an integrated ESD-protected gate, and a 175 °C maximum operating junction temperature. The PG-TDSON-8 package exposes the metal drain tab to the PCB, providing a thermal pad that yields very low thermal resistance to the heatsink copper pour, essential for high-current automotive loads.
In terms of architecture, the part uses a shielded-gate trench cell that achieves a figure-of-merit (FOM = R<sub>DS(on)</sub> × Qg) substantially better than planar MOSFETs of equivalent die size. This translates directly into lower conduction and switching losses, enabling higher switching frequencies and smaller magnetics in DC-DC converter and motor-drive applications.
Typical applications include 12 V/24 V automotive high-current switching such as electric power steering (EPS), transmission control units, brake-by-wire systems, battery management system (BMS) protection, DC-DC converters in 48 V mild-hybrid systems, and high-side load switches in body electronics modules.
When designing with this MOSFET, place it on a minimum 1 oz copper pour with thermal vias under the exposed pad, and ensure the gate drive voltage reaches at least 10 V to achieve the datasheet R<sub>DS(on)</sub> rating. Below 6 V V<sub>GS</sub> the device may not fully enhance, resulting in dramatically higher losses and possible thermal runaway.
This page synthesizes distributor pricing, drop-in automotive-grade alternatives, and practical thermal-layout guidance not found in the manufacturer datasheet alone.
Alternativas drop-in para IAUC60N04S6N044ATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IAUC60N04S6N044ATMA1 (mesmo formato e footprint) — diferindo em Package, Technology, Part Family, Operating Temperature Range, Automotive Qualification.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IAUC60N04S6N031HATMA1
✅ Drop-In✓ Em estoque
$0.95 / unidade
Ver ficha técnica →IAUC100N04S6L014ATMA1
✅ Drop-In✓ Em estoque
$0.72 / unidade
Ver ficha técnica →IAUC120N04S6L012ATMA1
✅ Drop-In✓ Em estoque
$1.21 / unidade
Ver ficha técnica →ISC0802NLSATMA1
✅ Drop-In✓ Em estoque
$1.8 / unidade
Ver ficha técnica →ISC0703NLSATMA1
✅ Drop-In✓ Em estoque
$0.51 / unidade
Ver ficha técnica →BSC123N08NS3GATMA1
✅ Drop-In✓ Em estoque
$0.71 / unidade
Ver ficha técnica →IAUC60N04S6N044ATMA1 Classificações máximas e características elétricas
| Technology | OptiMOS-6 N-channel trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ |
| Power Dissipation (P_D) at Tc=25°C | 42 W |
| Temperatura de junção de operação | -55°C to +175°C |
| Encapsulamento | PG-TDSON-8 (5x6 mm) with exposed pad |
| Tipo de montagem | Surface Mount |
| Nível MSL | 1 (unlimited) |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) |
| Status RoHS | Compliant |
Configuração de pinos do IAUC60N04S6N044ATMA1
| Pino 1 | GATE — Gate drive input (ESD-protected) |
| Pino 2 | SOURCE — Source connection (internally bonded to pins 2-7) |
| Pino 3 | SOURCE — Source connection |
| Pino 4 | SOURCE — Source connection |
| Pino 5 | SOURCE — Source connection |
| Pino 6 | SOURCE — Source connection |
| Pino 7 | SOURCE — Source connection |
| Pino 8 | SOURCE — Source connection (top thermal pad) |
| Pino EP | DRAIN — Drain connection via exposed bottom thermal pad |
Área de Operação Segura (DC)
Aplicações típicas
IAUC60N04S6N044ATMA1 é adequado para 6 aplicaçãos: Electric Power Steering (EPS), 12V/24V Automotive Body Control Module, Battery Management System (BMS) Protection, 48V Mild-Hybrid DC-DC Converter, Brake-by-Wire and Transmission Control, Industrial 24V Brushless DC Motor Drive.
Electric Power Steering (EPS)
The IAUC60N04S6N044ATMA1 is well-matched to electric power steering motor drives where high peak currents and continuous torque demand require a low-R<sub>DS(on)</sub> switching element. Its 4.4 mΩ on-resistance at V<sub>GS</sub>=10 V and 60 A continuous rating handle the 30-50 A peak currents typical of EPS assist motors without exceeding the 175 °C junction limit. Placed in the H-bridge high-side/low-side position, the part's AEC-Q101 automotive qualification and 42 W power dissipation rating meet OEM reliability targets. Unlike planar MOSFETs, the OptiMOS-6 trench structure reduces switching losses, improving PWM frequency headroom for smoother torque ripple control.
Recomendado
12V/24V Automotive Body Control Module
Body control modules aggregate high-side switches for lighting, door locks, and seat controllers. The IAUC60N04S6N044ATMA1's 40 V V_DS rating tolerates 24 V truck/bus jump-start transients (clamped by the module's TVS), while its 4.4 mΩ R<sub>DS(on)</sub> keeps per-channel conduction loss under 2 W at 20 A load. Placed as the high-side switch driven by a BTS5008-1EJA smart high-side driver, the part provides robust inrush handling for incandescent bulb and motor loads. The exposed PG-TDSON-8 pad connects to module copper heatsinking, keeping junction temperature rise below 50 °C at full load.
Recomendado
Battery Management System (BMS) Protection
In 12 V lithium-ion BMS packs, the IAUC60N04S6N044ATMA1 serves as the pack isolation MOSFET, carrying charge/discharge currents up to 60 A continuous. Its low 4.4 mΩ R<sub>DS(on)</sub> reduces parasitic loss across the contactor, improving round-trip efficiency and reducing heat dissipation in the battery pack enclosure. The 175 °C maximum junction temperature and AEC-Q101 qualification satisfy automotive safety standards (ISO 26262 ASIL-B capable systems). Placed in series with the battery stack, the part provides fast electronic isolation during fault conditions.
Recomendado
48V Mild-Hybrid DC-DC Converter
The IAUC60N04S6N044ATMA1 is positioned as the primary-side switch in 48 V-to-12 V buck converters used in mild-hybrid vehicles. Its 40 V V_DS rating supports 48 V bus operation with adequate margin, and the OptiMOS-6 cell structure achieves low FOM (R<sub>DS(on)</sub> × Qg) for >100 kHz switching frequencies, shrinking magnetic components. The exposed thermal pad enables direct PCB heatsinking with thermal vias, managing the 42 W dissipation rating. AEC-Q101 qualification is mandatory for under-hood 48 V systems where ambient temperatures exceed 105 °C.
Recomendado
Brake-by-Wire and Transmission Control
Safety-critical x-by-wire systems including brake-by-wire and electronic transmission control use the IAUC60N04S6N044ATMA1 in redundant H-bridge configurations driving small DC motors and solenoids. The part's automotive-grade qualification, hermetic-seal-compatible SS08 package, and 175 °C junction rating support under-hood operating environments. The 4.4 mΩ R<sub>DS(on)</sub> keeps conduction losses low during pulse-width-modulated actuator control, while the AEC-Q101 qualification ensures the long-term reliability required by ISO 26262 functional safety standards for ASIL-C and ASIL-D systems.
Recomendado
Industrial 24V Brushless DC Motor Drive
Outside automotive, the IAUC60N04S6N044ATMA1 fits 24 V industrial BLDC motor drives in factory automation and robotics. Its 40 V V_DS rating tolerates 24 V bus transients with margin, and the 60 A continuous rating covers mid-power motor applications up to ~1.5 kW. The PG-TDSON-8 SS08 footprint allows compact three-phase inverter designs, with three MOSFETs per phase leg fitting on a small PCB. The exposed thermal pad simplifies thermal management through direct PCB copper heatsinking with thermal vias to inner planes.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IAUC60N04S6N044ATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IAUC60N04S6N031HATMA1 | IAUC100N04S6L014ATMA1 | IAUC120N04S6L012ATMA1 | ISC0802NLSATMA1 | ISC0703NLSATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max (V) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V | 80 V |
| R_DS(on) max @ V_GS=10V (mΩ) | 4.4 mΩ | 3.1 mΩ | 1.4 mΩ | 1.2 mΩ | 8.0 mΩ | 7.0 mΩ | 12.3 mΩ |
| Automotive Grade | Yes (AEC-Q101, IAU prefix) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (industrial grade, ISC prefix) | Yes (industrial grade, ISC prefix) | Yes (AEC-Q101) |
| Technology Generation | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-3 |
Principais diferenciais
- Lower R_DS(on) at higher current rating (vs IAUC60N04S6N031HATMA1)
- Lower current rating enables smaller package, lower cost (vs IAUC120N04S6L012ATMA1)
- Lower voltage rating vs higher-voltage alternatives (vs BSC123N08NS3GATMA1)
Notas de projeto
Estimated: at full 60 A continuous drain current with R_DS(on)=4.4 mΩ, conduction loss equals I² × R = 60² × 0.0044 ≈ 15.8 W. The PG-TDSON-8 package's exposed thermal pad should be soldered to a minimum 1 oz copper pour area of at least 25 mm x 25 mm (625 mm²) on the top layer, supplemented with a 3x3 array of 0.3 mm thermal vias to inner copper planes. Without this heatsinking, junction temperature rise can exceed 50 °C above ambient at full load, approaching the 175 °C T_j maximum. For continuous high-current applications, ensure ambient temperature stays below 105 °C under-hood.
Place the gate driver within 5 mm of the GATE pin (pin 1) to minimize gate-loop inductance. Use a 10 Ω gate resistor in series with the driver output to dampen ringing, and add a 100 kΩ pull-down resistor from GATE to SOURCE to keep the MOSFET off during controller reset. The SOURCE pins (2-7) should be stitched together on the top PCB layer with a wide trace or copper pour, and Kelvin-connected to the gate driver's ground reference to eliminate source-inductance-induced turn-on slowdown.
Do not drive the gate below 6 V — the OptiMOS-6 cell structure requires at least 10 V V_GS to achieve the datasheet 4.4 mΩ R_DS(on). Below 6 V the device operates in the linear region with dramatically higher losses and risk of thermal runaway. For battery-direct applications where the 12 V rail can drop to 6 V during cranking, add a gate-drive boost converter or charge pump to maintain full enhancement. Also ensure the SOURCE Kelvin connection is not shared with high-current power-path ground to avoid ground-bounce-induced false turn-on of the complementary MOSFET in H-bridge configurations.
Informações de conformidade
AEC-Q101 qualified (automotive discrete standard, equivalent to AEC-Q100 for discretes). RoHS and lead-free compliant per Infineon product page. Halogen-free status not explicitly stated in verified web data — [DATA_NEEDED].
