IAUCN04S7L042GATMA1 vs IAUCN04S7L009ATMA1 Comparação
Comparação detalhada lado a lado de IAUCN04S7L042GATMA1 por Infineon e IAUCN04S7L009ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AtivoInfineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUCN04S7L042GATMA1 | IAUCN04S7L009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,86 | $0,96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | OptiMOS™ 7 (trench-gate) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Encapsulamento | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-34 (TDSON EP) |
| Tipo de montagem | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Faixa de temperatura de operação | -55C to +175C (Tj) | -55 °C to +175 °C (Tj) |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | 1 |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Part Number | — | IAUCN04S7L009ATMA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id, Tc=25°C) | — | 275 A (Tj) |
| Continuous Drain Current (Id, Tc=100°C) | — | 175 A |
| Power Dissipation (Pd, Tc=25°C) | — | 129 W |
| Rds(on) Max @ Vgs=10V | — | 0.91 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Automotive Qualification | — | AEC-Q101 qualified |