IAUCN04S7L042GATMA1 vs IAUCN04S7L009ATMA1 对比

详细并排对比 IAUCN04S7L042GATMA1 出自 Infineon 和 IAUCN04S7L009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IAUCN04S7L042GATMA1 IAUCN04S7L009ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $0.96
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 40V —
Technology Trench N-Channel MOSFET OptiMOS™ 7 (trench-gate)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 77 A —
Maximum Power Dissipation (PD, Tc) 50 W —
封装 PG-THSOG-4 (SSO4G 5x6) leaded surface mount PG-TDSON-8-34 (TDSON EP)
安装类型 Surface Mount (IMS substrate / FR4 with thermal vias) Surface Mount
工作温度范围 -55C to +175C (Tj) -55 °C to +175 °C (Tj)
Polarity / Channel Type N-Channel enhancement mode —
Automotive Qualified Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) —
RoHS 状态 Compliant Compliant
MSL 等级 1 1
Packing Tape & Reel (per -ATMA1 suffix) —
Target Substrate IMS substrate and legacy FR4 designs —
On-State Resistance RDS(on) [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg @ VGS=10V] —
Part Number — IAUCN04S7L009ATMA1
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id, Tc=25°C) — 275 A (Tj)
Continuous Drain Current (Id, Tc=100°C) — 175 A
Power Dissipation (Pd, Tc=25°C) — 129 W
Rds(on) Max @ Vgs=10V — 0.91 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Automotive Qualification — AEC-Q101 qualified

数据手册与资源

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