IAUCN08S7L033ATMA1 vs IAUC41N06S5N102ATMA1 Comparação
Comparação detalhada lado a lado de IAUCN08S7L033ATMA1 por Infineon e IAUC41N06S5N102ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUCN08S7L033ATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,86 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Faixa de temperatura de operação | -55°C to +175°C (TJ) | -55C to +175C (junction) |
| Encapsulamento | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Tipo de montagem | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | — |
| Technology | OptiMOS 7 trench MOSFET | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 (per JEDEC J-STD-020, typical for this package) | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Automotive Qualification | — | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Polarity | — | N-Channel (single) |