IAUCN08S7L033ATMA1 vs IAUC41N06S5N102ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L033ATMA1 by Infineon and IAUC41N06S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveInfineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΞ© OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L033ATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΞ© | β |
| Continuous Drain Current (ID) at Tj | 130 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | [DATA_NEEDED: ID at Tc=25C] | β |
| Power Dissipation (PD) at Tc=25Β°C | 118 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate-Source Voltage (VGS) max | Β±20 V (typical Infineon OptiMOS 7 limit) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55C to +175C (junction) |
| Package | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | β |
| Technology | OptiMOS 7 trench MOSFET | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, typical for this package) | β |
| Part Family | β | OptiMOS 5 Power-Transistor |
| Continuous Drain Current (ID, Tc) | β | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | β | 42 W |
| On-Resistance (RDS(on)) | β | 10.2 mΞ© at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | β | 3.4 V (typical) |
| Total Gate Charge (QG) | β | 12.5 nC |
| Automotive Qualification | β | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Polarity | β | N-Channel (single) |