IAUS260N10S5N019TATMA1 vs IPC100N04S5L1R5ATMA1 Comparação
Comparação detalhada lado a lado de IAUS260N10S5N019TATMA1 por Infineon e IPC100N04S5L1R5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IAUS260N10S5N019TATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,95 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 260 A (Tj) | — |
| On-State Resistance (Rds(on)) | 1.9 mΩ (typical, 10 V Vgs) | — |
| Power Dissipation (Pd) | 300 W (Tc) | — |
| Encapsulamento | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-TDSON-8-34 (SS08 leadless) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 16 | — |
| Faixa de temperatura de operação | -55 C to +175 C (Tj) | -55C to +175C |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Technology | OptiMOS 5 trench-gate | — |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) | — |
| Status RoHS | Compliant | Compliant (Green Product) |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Nível MSL | — | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |