IAUS300N08S5N011TATMA1 vs BSC050N04LSGATMA1 Comparação
Comparação detalhada lado a lado de IAUS300N08S5N011TATMA1 por Infineon e BSC050N04LSGATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
IAUS300N08S5N011TATMA1 ✓ Ativo
Comparação de especificações
| Parâmetro | IAUS300N08S5N011TATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,65 | $0,41 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS-5 (trench MOSFET) | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 80 V | — |
| Continuous Drain Current (I_D, Tj) | 300 A | — |
| Power Dissipation (P_D, Tc) | 375 W | — |
| R_DS(on) Max @ V_GS=10V | 1.1 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | 3 V (max) | — |
| Total Gate Charge (Q_G) @ 10V | 231 nC | — |
| Output Capacitance (C_OSS) | 130 pF (typ) | — |
| Reverse Transfer Capacitance (C_RSS) | 16.25 nF (typ) | — |
| Faixa de temperatura de operação | -55 C to +175 C (Tj) | -55C to +150C |
| Encapsulamento | PG-HDSOP-16-2 (HDSOP-16) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Number of Channels | 1 | — |
| Status RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (Infineon automotive part) | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| Nível MSL | — | 1 |