IAUS300N08S5N011TATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IAUS300N08S5N011TATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon
IAUS300N08S5N011TATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IAUS300N08S5N011TATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.65 | $0.41 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS-5 (trench MOSFET) | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 80 V | β |
| Continuous Drain Current (I_D, Tj) | 300 A | β |
| Power Dissipation (P_D, Tc) | 375 W | β |
| R_DS(on) Max @ V_GS=10V | 1.1 mOhm | β |
| Gate Threshold Voltage (V_GS(th)) | 3 V (max) | β |
| Total Gate Charge (Q_G) @ 10V | 231 nC | β |
| Output Capacitance (C_OSS) | 130 pF (typ) | β |
| Reverse Transfer Capacitance (C_RSS) | 16.25 nF (typ) | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | -55C to +150C |
| Package | PG-HDSOP-16-2 (HDSOP-16) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Channels | 1 | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (Infineon automotive part) | β |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |
| MSL Level | β | 1 |