IPG20N06S4L14AATMA1 vs IAUT300N08S5N012ATMA2 Comparação
Comparação detalhada lado a lado de IPG20N06S4L14AATMA1 por Infineon e IAUT300N08S5N012ATMA2 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ AtivoComparação de especificações
| Parâmetro | IPG20N06S4L14AATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,82 | $2,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N06S4L14AATMA1 | — |
| FET Type | 2 N-Channel (Dual) | — |
| Drain-to-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 50 W | — |
| RDS(on) at VGS=10V | 13.7 mΩ typical | — |
| RDS(on) at VGS=4.5V | 14 mΩ typical | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Logic-Level Gate Drive | Yes | — |
| Faixa de temperatura de operação | -55°C to +175°C (junction) | -55 °C to +175 °C (TJ) |
| Encapsulamento | PG-TDSON-8-10 (Wettable Flank) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Peak Reflow Temperature | 260°C | — |
| Avalanche Tested | 100% (per datasheet) | — |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant |
| AOI Compatible | Yes (Wettable Flank) | — |
| Technology | OptiMOS™ Trench | — |
| Product Family | — | OptiMOS™-5 80 V |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Nível MSL | — | [DATA_NEEDED: MSL level] |