IRF1310NSTRLPBF vs IPTC039N15NM5ATMA1 Comparação
Comparação detalhada lado a lado de IRF1310NSTRLPBF por Infineon e IPTC039N15NM5ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IRF1310NSTRLPBF | IPTC039N15NM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,84 | $4,05 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 73.3 nC | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Faixa de temperatura de operação | -55C to +175C | — |
| Encapsulamento | D2PAK (TO-263AB) | PG-HDSOP-16-2 (top-side cooled) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | OptiMOS 5 trench |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| Continuous Drain Current (ID) at Tc | — | 190 A |
| Power Dissipation (PD) at Ta | — | 3.8 W |
| Power Dissipation (PD) at Tc | — | 319 W |
| On-Resistance RDS(on) typical | — | 3.9 mOhm |
| Gate Charge Qg typical | — | 74 nC |
| Maximum Gate-Source Voltage (VGS) | — | 20 V |
| Temperatura de operação | — | -55 C to +175 C (junction) |
| Cooling | — | Top-side cooled (case above PCB) |
| Status RoHS | — | Compliant |