IRF9540NSTRLPBF vs IRF9530NSTRLPBF Comparação
Comparação detalhada lado a lado de IRF9540NSTRLPBF por Infineon e IRF9530NSTRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRF9540NSTRLPBF | IRF9530NSTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,58 | $0,65 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Product Type | Single P-Channel Power MOSFET (HEXFET) | — |
| Drain-Source Voltage (Vdss) | -100 V | — |
| Continuous Drain Current (Id) | -23 A (at Tc) | — |
| On-Resistance (Rds(on)) | 117 mOhm max | — |
| Total Gate Charge (Qg) | 64.7 nC | 38.7 nC (typ) |
| Power Dissipation (Ta) | 3.1 W | — |
| Power Dissipation (Tc) | 110 W | — |
| Encapsulamento | D2PAK (TO-263), surface mount | D2PAK (TO-263-3) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology | HEXFET, Advanced Process | HEXFET (Planar DMOS) |
| Polarity | P-Channel | P-Channel |
| Operating Mode | Enhancement-mode | — |
| Avalanche Rated | Yes | [DATA_NEEDED: EAS rating] |
| Lead Finish | Pb-free, RoHS-compliant | — |
| Shipping Media | Tape and Reel (TR suffix) | — |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC=25C | — | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 200 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissition (PD) at TC=25C | — | 79 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Thermal Resistance Theta_JC | — | 1.5 C/W (typ) |
| Faixa de temperatura de operação | — | -55C to +150C (TJ) |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |