IRF9540NSTRLPBF vs IRF9530NSTRLPBF Comparison

Detailed side-by-side comparison of IRF9540NSTRLPBF by Infineon and IRF9530NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF9540NSTRLPBF IRF9530NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.65
Manufacturer Infineon (formerly International Rectifier) —
Product Type Single P-Channel Power MOSFET (HEXFET) —
Drain-Source Voltage (Vdss) -100 V —
Continuous Drain Current (Id) -23 A (at Tc) —
On-Resistance (Rds(on)) 117 mOhm max —
Total Gate Charge (Qg) 64.7 nC 38.7 nC (typ)
Power Dissipation (Ta) 3.1 W —
Power Dissipation (Tc) 110 W —
Package D2PAK (TO-263), surface mount D2PAK (TO-263-3)
Mounting Type Surface Mount Surface Mount
Technology HEXFET, Advanced Process HEXFET (Planar DMOS)
Polarity P-Channel P-Channel
Operating Mode Enhancement-mode —
Avalanche Rated Yes [DATA_NEEDED: EAS rating]
Lead Finish Pb-free, RoHS-compliant —
Shipping Media Tape and Reel (TR suffix) —
Drain-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TC=25C — -14 A
On-Resistance RDS(on) max @ VGS=-10V — 200 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) range]
Power Dissition (PD) at TC=25C — 79 W
Power Dissipation (PD) at TA=25C — 3.8 W
Thermal Resistance Theta_JC — 1.5 C/W (typ)
Operating Temperature Range — -55C to +150C (TJ)
Lead-Free / RoHS — Yes (Pb-free suffix)

Datasheets & Resources

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