IRFH5300TRPBF vs IRF7854TRPBF Comparação
Comparação detalhada lado a lado de IRFH5300TRPBF por Infineon e IRF7854TRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRFH5300TRPBF | IRF7854TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,45 | $0,48 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 40 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | 336 A | — |
| On-Resistance RDS(on) max at VGS=10V | 1.4 mOhm | 13.4 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) | 50 nC | — |
| Power Dissition at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 250 W | — |
| Faixa de temperatura de operação | -55C to +150C | -55°C to +150°C (TJ) |
| Encapsulamento | PQFN-8 (5x6 mm) | SO-8 |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology | HEXFET (StrongIRFET) | HEXFET (planar N-channel) |
| Gate Drive Level | Logic-level (5V optimized) | — |
| JEDEC Qualification | Yes | — |
| Status RoHS | Compliant | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |