IRFH5300TRPBF vs IRF7854TRPBF Comparison
Detailed side-by-side comparison of IRFH5300TRPBF by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5300TRPBF
IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
IRFH5300TRPBF β Active
Specification Comparison
| Parameter | IRFH5300TRPBF | IRF7854TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.45 | $0.48 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 40 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | 336 A | β |
| On-Resistance RDS(on) max at VGS=10V | 1.4 mOhm | 13.4 mΞ© |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Total Gate Charge (Qg) | 50 nC | β |
| Power Dissition at TA=25C | 3.6 W | β |
| Power Dissipation at TC=25C | 250 W | β |
| Operating Temperature Range | -55C to +150C | -55Β°C to +150Β°C (TJ) |
| Package | PQFN-8 (5x6 mm) | SO-8 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (StrongIRFET) | HEXFET (planar N-channel) |
| Gate Drive Level | Logic-level (5V optimized) | β |
| JEDEC Qualification | Yes | β |
| RoHS Status | Compliant | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 10 A |
| Power Dissipation (PD) at Ta=25Β°C | β | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) max | β | 4.9 V |
| Total Gate Charge Qg | β | 27 nC |
| Lead-Free / RoHS | β | Yes (PBF suffix, lead-free) |
| Qualification | β | JEDEC industrial, Normal level |
| Solder Process | β | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | β | 10 V |