IRFR220NTRPBF vs IRFR220NTRLPBF Comparação
Comparação detalhada lado a lado de IRFR220NTRPBF por Infineon e IRFR220NTRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRFR220NTRPBF | IRFR220NTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,22 | $0,22 |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| On-Resistance Rds(on) max at VGS=10V | 600 milliohm | — |
| Total Gate Charge (Qg) | 15 nC (typical per Mouser listing) | [DATA_NEEDED: total gate charge Qg] |
| Maximum Power Dissition (PD) at TC=25°C | 43 W | — |
| Temperatura de junção de operação | -55°C to +150°C | — |
| Encapsulamento | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 (unlimited floor life per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant (PBF suffix) | Compliant (Pb-free PBF suffix) |
| Avalanche Energy Rated | Yes (fully characterized) | — |
| Lead-Free | Yes (PBF suffix indicates Pb-free plating) | — |
| Polarity | — | N-Channel |
| Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 5 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.800 ohm (max) |
| Gate-to-Drain Charge (Qgd) | — | Low (per datasheet - HEXFET design) |
| Power Dissipation (Pd) at Tc=25C | — | 43 W |
| Faixa de temperatura de operação | — | -55C to +150C (junction) |
| Packaging | — | Tape & Reel (Left orientation - TRLPBF) |
| Avalanche Rated | — | Yes (HEXFET ruggedized design) |
| Technology Family | — | HEXFET, Planar, Generation 3 |