IRFR220NTRPBF vs IRFR220NTRLPBF Comparison
Detailed side-by-side comparison of IRFR220NTRPBF by Infineon and IRFR220NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR220NTRPBF | IRFR220NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.22 |
| FET Type | N-Channel MOSFET | β |
| Technology | HEXFET (IR MOSFET) | β |
| Drain-to-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 5 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th)] |
| On-Resistance Rds(on) max at VGS=10V | 600 milliohm | β |
| Total Gate Charge (Qg) | 15 nC (typical per Mouser listing) | [DATA_NEEDED: total gate charge Qg] |
| Maximum Power Dissition (PD) at TC=25Β°C | 43 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited floor life per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant (PBF suffix) | Compliant (Pb-free PBF suffix) |
| Avalanche Energy Rated | Yes (fully characterized) | β |
| Lead-Free | Yes (PBF suffix indicates Pb-free plating) | β |
| Polarity | β | N-Channel |
| Mode | β | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 200 V |
| Continuous Drain Current (Id) at Tc=25C | β | 5 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | β | 0.800 ohm (max) |
| Gate-to-Drain Charge (Qgd) | β | Low (per datasheet - HEXFET design) |
| Power Dissipation (Pd) at Tc=25C | β | 43 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Packaging | β | Tape & Reel (Left orientation - TRLPBF) |
| Avalanche Rated | β | Yes (HEXFET ruggedized design) |
| Technology Family | β | HEXFET, Planar, Generation 3 |