IRL540NSTRLPBF vs IRLR3410TRLPBF Comparação
Comparação detalhada lado a lado de IRL540NSTRLPBF por Infineon e IRLR3410TRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRL540NSTRLPBF | IRLR3410TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,51 | $0,65 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 36 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 60 A |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ | — |
| On-Resistance (RDS(on)) max @ VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Total Gate Charge (Qg) | 49.3 nC | 22.7 nC |
| Power Dissipation (PD) at Tc=25°C | 140 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Faixa de temperatura de operação | -55°C to +175°C | — |
| Encapsulamento | TO-263 (D2PAK) | TO-252AA (DPAK), surface mount |
| Tipo de montagem | Surface Mount | Surface Mount (tape and reel) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Status RoHS | Compliant (LPBF suffix indicates lead-free) | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| Technology | — | HEXFET (5th generation) N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Gate Drive Level | — | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | — | 79 W |
| Temperatura de junção de operação | — | -55C to +175C |
| RoHS Compliance | — | Compliant (Pb-free) |
| Avalanche Rated | — | Yes (UIS tested) |