IRLR8726TRLPBF vs IRLR8726TRPBF Comparação
Comparação detalhada lado a lado de IRLR8726TRLPBF por Infineon e IRLR8726TRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRLR8726TRLPBF | IRLR8726TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,36 | $0,32 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 86 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) Max at VGS=10V | 5.8 mOhm | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Maximum Power Dissipation (PD) at TC=25C | 75 W | — |
| Temperatura de junção de operação | -55C to +175C | -55C to +175C |
| Encapsulamento | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology Family | StrongIRFET | — |
| RoHS Compliance | ROHS3 Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Nível MSL | 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLR8726TRPBF |
| Technology | — | StrongIRFET™ (HEXFET) |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D) at T_C | — | 86 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max | — | 5.8 mΩ at V_GS = 10 V |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) min/max] |
| Gate Charge Q_g (typ.) | — | 15 nC |
| Power Dissipation P_D | — | 75 W at T_C |
| Número de pinos | — | 3 (Gate, Drain, Source) |
| Status RoHS | — | Compliant |
| Livre de halogênio | — | Yes |