IRLR8726TRLPBF vs IRLR8726TRPBF 对比

详细并排对比 IRLR8726TRLPBF 出自 Infineon 和 IRLR8726TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRLR8726TRLPBF IRLR8726TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $0.32
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC=25C 86 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) Max at VGS=10V 5.8 mOhm —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 15 nC —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Maximum Power Dissipation (PD) at TC=25C 75 W —
工作结温 -55C to +175C -55C to +175C
封装 TO-252AA (DPAK) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
Technology Family StrongIRFET —
RoHS Compliance ROHS3 Compliant —
Lead-Free Yes (PBF suffix) —
MSL 等级 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) 1
Manufacturer — Infineon Technologies
Part Number — IRLR8726TRPBF
Technology — StrongIRFET™ (HEXFET)
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D) at T_C — 86 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max — 5.8 mΩ at V_GS = 10 V
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) min/max]
Gate Charge Q_g (typ.) — 15 nC
Power Dissipation P_D — 75 W at T_C
引脚数 — 3 (Gate, Drain, Source)
RoHS 状态 — Compliant
无卤 — Yes

数据手册与资源

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