IRLR8726TRLPBF vs IRLR8726TRPBF 비교

다음의 상세 나란히 비교: IRLR8726TRLPBF 제조: Infineon 및 IRLR8726TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLR8726TRLPBF IRLR8726TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.36 $0.32
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC=25C 86 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) Max at VGS=10V 5.8 mOhm —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 15 nC —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Maximum Power Dissipation (PD) at TC=25C 75 W —
동작 접합 온도 -55C to +175C -55C to +175C
패키지 TO-252AA (DPAK) TO-252AA (DPAK)
실장 유형 Surface Mount Surface Mount
Technology Family StrongIRFET —
RoHS Compliance ROHS3 Compliant —
Lead-Free Yes (PBF suffix) —
MSL 레벨 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) 1
Manufacturer — Infineon Technologies
Part Number — IRLR8726TRPBF
Technology — StrongIRFET™ (HEXFET)
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D) at T_C — 86 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max — 5.8 mΩ at V_GS = 10 V
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) min/max]
Gate Charge Q_g (typ.) — 15 nC
Power Dissipation P_D — 75 W at T_C
핀 수 — 3 (Gate, Drain, Source)
RoHS 상태 — Compliant
할로겐 프리 — Yes

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