ITS716GFUMA1 vs BTS621L1E3128ABUMA1 Comparação

Comparação detalhada lado a lado de ITS716GFUMA1 por Infineon e BTS621L1E3128ABUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro ITS716GFUMA1 BTS621L1E3128ABUMA1
Marca Infineon Infineon
Categoria Power MOSFET Drivers Power MOSFET Drivers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $3,22 $2,45
Product Type Smart High-Side Power Switch Dual-channel smart high-side power switch (PROFET)
Number of Channels 4 2 (dual high-side, 1:1)
Configuração de saída High-side (N-Channel MOSFET) —
Continuous Current per Channel 2.3 A —
On-State Resistance (RON) per Channel [DATA_NEEDED: Ron typical value] —
Operating Voltage Range (Vbb) 5 V to 36 V —
Load Dump Tolerance Up to 45 V —
Standby Current [DATA_NEEDED: Iq standby typical] —
Input Logic Levels CMOS/TTL compatible, parallel interface —
Diagnostic Output Open-drain fault flag, one per channel —
Protection Features Overload, short-circuit, over-temperature, over-voltage, ESD —
PWM Capability Up to 1 kHz —
Faixa de temperatura de operação -40 C to +85 C (industrial grade) -40 °C to +150 °C junction
Encapsulamento PG-DSO-20-32 (20-pin SOIC, exposed pad) PG-TO263-7-2 (D2PAK-7, exposed tab)
Resistência térmica, junção-ambiente [DATA_NEEDED: theta_JA value] —
Tipo de montagem Surface Mount Surface Mount
Nível MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Yes - open-load and overtemperature reporting
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
Technology — Smart SIPMOS (monolithic)
RoHS / Lead-Free — Compliant (Pb-free)

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