ITS716GFUMA1 vs BTS621L1E3128ABUMA1 비교

다음의 상세 나란히 비교: ITS716GFUMA1 제조: Infineon 및 BTS621L1E3128ABUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 ITS716GFUMA1 BTS621L1E3128ABUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.22 $2.45
Product Type Smart High-Side Power Switch Dual-channel smart high-side power switch (PROFET)
Number of Channels 4 2 (dual high-side, 1:1)
출력 구성 High-side (N-Channel MOSFET) —
Continuous Current per Channel 2.3 A —
On-State Resistance (RON) per Channel [DATA_NEEDED: Ron typical value] —
Operating Voltage Range (Vbb) 5 V to 36 V —
Load Dump Tolerance Up to 45 V —
Standby Current [DATA_NEEDED: Iq standby typical] —
Input Logic Levels CMOS/TTL compatible, parallel interface —
Diagnostic Output Open-drain fault flag, one per channel —
Protection Features Overload, short-circuit, over-temperature, over-voltage, ESD —
PWM Capability Up to 1 kHz —
동작 온도 범위 -40 C to +85 C (industrial grade) -40 °C to +150 °C junction
패키지 PG-DSO-20-32 (20-pin SOIC, exposed pad) PG-TO263-7-2 (D2PAK-7, exposed tab)
열 저항, 접합-주변 [DATA_NEEDED: theta_JA value] —
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL rating] —
RoHS 상태 Compliant —
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Yes - open-load and overtemperature reporting
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
Technology — Smart SIPMOS (monolithic)
RoHS / Lead-Free — Compliant (Pb-free)

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