ITS716GFUMA1 vs BTS621L1E3128ABUMA1 对比

详细并排对比 ITS716GFUMA1 出自 Infineon 和 BTS621L1E3128ABUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 ITS716GFUMA1 BTS621L1E3128ABUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.22 $2.45
Product Type Smart High-Side Power Switch Dual-channel smart high-side power switch (PROFET)
Number of Channels 4 2 (dual high-side, 1:1)
输出配置 High-side (N-Channel MOSFET) —
Continuous Current per Channel 2.3 A —
On-State Resistance (RON) per Channel [DATA_NEEDED: Ron typical value] —
Operating Voltage Range (Vbb) 5 V to 36 V —
Load Dump Tolerance Up to 45 V —
Standby Current [DATA_NEEDED: Iq standby typical] —
Input Logic Levels CMOS/TTL compatible, parallel interface —
Diagnostic Output Open-drain fault flag, one per channel —
Protection Features Overload, short-circuit, over-temperature, over-voltage, ESD —
PWM Capability Up to 1 kHz —
工作温度范围 -40 C to +85 C (industrial grade) -40 °C to +150 °C junction
封装 PG-DSO-20-32 (20-pin SOIC, exposed pad) PG-TO263-7-2 (D2PAK-7, exposed tab)
热阻,结到环境 [DATA_NEEDED: theta_JA value] —
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant —
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
Input Logic Compatibility — CMOS-compatible, ground-referenced
Diagnostic Feedback — Yes - open-load and overtemperature reporting
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
Technology — Smart SIPMOS (monolithic)
RoHS / Lead-Free — Compliant (Pb-free)

数据手册与资源

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