K9EUGY8S0M-CCK0 vs K9FGGY8J5A-CCK0 Comparação

Comparação detalhada lado a lado de K9EUGY8S0M-CCK0 por Samsung Electronics e K9FGGY8J5A-CCK0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9EUGY8S0M-CCK0 K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 ✓ Ativo
Samsung Electronics
K9FGGY8J5A-CCK0 K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 ✓ Ativo

Comparação de especificações

Parâmetro K9EUGY8S0M-CCK0 K9FGGY8J5A-CCK0
Marca Samsung Electronics Samsung Electronics
Categoria Memory ICs EEPROM
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $9,95
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D TLC V-NAND Flash Memory —
Density [DATA_NEEDED: total device density in Gb] [DATA_NEEDED: density]
Cell Type TLC (3 bits per cell) [DATA_NEEDED: SLC/MLC/TLC/QLC]
V-NAND Layers [DATA_NEEDED: layer count] —
Interface [DATA_NEEDED: interface type, e.g. Toggle DDR] [DATA_NEEDED: asynchronous/toggle/ONFI]
Supply Voltage VCC [DATA_NEEDED: VCC core supply voltage] —
Supply Voltage VCCQ [DATA_NEEDED: VCCQ I/O supply voltage] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Package Type [DATA_NEEDED: FBGA ball count and dimensions] —
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Grade Suffix CCK0 (standard commercial grade) —
Tipo de montagem Surface Mount (BGA) Surface Mount
Status RoHS [DATA_NEEDED: RoHS compliance status] Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system)
Product Family — K9-series NAND Flash
Tipo de memória — NAND Flash (non-volatile)
Organização da memória — [DATA_NEEDED: organization (e.g. x8)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ range]
Program Time (typ) — [DATA_NEEDED: tPROG]
Erase Time (typ) — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]
Encapsulamento — [DATA_NEEDED: package type (FBGA)]

Fichas técnicas e recursos

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