K9EUGY8S0M-CCK0 vs K9FGGY8J5A-CCK0 Comparaison

Comparaison détaillée côte à côte de K9EUGY8S0M-CCK0 par Samsung Electronics et K9FGGY8J5A-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Samsung Electronics
K9EUGY8S0M-CCK0 K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 ✓ Actif
Samsung Electronics
K9FGGY8J5A-CCK0 K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 ✓ Actif

Comparaison des spécifications

Paramètre K9EUGY8S0M-CCK0 K9FGGY8J5A-CCK0
Marque Samsung Electronics Samsung Electronics
Catégorie Memory ICs EEPROM
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $0,00 $9,95
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D TLC V-NAND Flash Memory —
Density [DATA_NEEDED: total device density in Gb] [DATA_NEEDED: density]
Cell Type TLC (3 bits per cell) [DATA_NEEDED: SLC/MLC/TLC/QLC]
V-NAND Layers [DATA_NEEDED: layer count] —
Interface [DATA_NEEDED: interface type, e.g. Toggle DDR] [DATA_NEEDED: asynchronous/toggle/ONFI]
Supply Voltage VCC [DATA_NEEDED: VCC core supply voltage] —
Supply Voltage VCCQ [DATA_NEEDED: VCCQ I/O supply voltage] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Package Type [DATA_NEEDED: FBGA ball count and dimensions] —
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Grade Suffix CCK0 (standard commercial grade) —
Type de montage Surface Mount (BGA) Surface Mount
Statut RoHS [DATA_NEEDED: RoHS compliance status] Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system)
Product Family — K9-series NAND Flash
Type de mémoire — NAND Flash (non-volatile)
Organisation de la mémoire — [DATA_NEEDED: organization (e.g. x8)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ range]
Program Time (typ) — [DATA_NEEDED: tPROG]
Erase Time (typ) — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]
Boîtier — [DATA_NEEDED: package type (FBGA)]

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