K9EUGY8S0M-CCK0 vs K9FGGY8J5A-CCK0 对比

详细并排对比 K9EUGY8S0M-CCK0 出自 Samsung Electronics 和 K9FGGY8J5A-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9EUGY8S0M-CCK0 K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 ✓ 量产中
Samsung Electronics
K9FGGY8J5A-CCK0 K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 ✓ 量产中

规格对比

参数 K9EUGY8S0M-CCK0 K9FGGY8J5A-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $9.95
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D TLC V-NAND Flash Memory —
Density [DATA_NEEDED: total device density in Gb] [DATA_NEEDED: density]
Cell Type TLC (3 bits per cell) [DATA_NEEDED: SLC/MLC/TLC/QLC]
V-NAND Layers [DATA_NEEDED: layer count] —
接口 [DATA_NEEDED: interface type, e.g. Toggle DDR] [DATA_NEEDED: asynchronous/toggle/ONFI]
Supply Voltage VCC [DATA_NEEDED: VCC core supply voltage] —
Supply Voltage VCCQ [DATA_NEEDED: VCCQ I/O supply voltage] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Package Type [DATA_NEEDED: FBGA ball count and dimensions] —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Grade Suffix CCK0 (standard commercial grade) —
安装类型 Surface Mount (BGA) Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS compliance status] Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system)
Product Family — K9-series NAND Flash
存储器类型 — NAND Flash (non-volatile)
存储组织 — [DATA_NEEDED: organization (e.g. x8)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ range]
Program Time (typ) — [DATA_NEEDED: tPROG]
Erase Time (typ) — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]
封装 — [DATA_NEEDED: package type (FBGA)]

数据手册与资源

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