MW7IC2040NR1 vs MW7IC18100NR1 Comparação

Comparação detalhada lado a lado de MW7IC2040NR1 por NXP Semiconductors e MW7IC18100NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MW7IC2040NR1 MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 ✓ Ativo
NXP Semiconductors
MW7IC18100NR1 MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP

MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP

MW7IC18100NR1 ✓ Ativo

Comparação de especificações

Parâmetro MW7IC2040NR1 MW7IC18100NR1
Marca NXP Semiconductors NXP Semiconductors
Categoria RF Amplifiers RF Amplifiers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $24,20 $61,20
Manufacturer NXP Semiconductors (formerly Freescale / Motorola Semiconductor) —
Technology RF LDMOS (Laterally Diffused MOSFET) —
RF Type General Purpose / Wideband Integrated Power Amplifier —
Função Two-stage integrated power amplifier with on-chip matching —
Frequency Range (Application) 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) —
Frequency Range (Characterization) 100 MHz to 1 GHz —
Supply Voltage (Vdd) 24 V to 32 V (nominal 28 V) —
Maximum Supply Voltage 32 V —
Quiescent Supply Current (Idq) 75 mA —
Small-Signal Gain 23.5 dB —
Output Power (avg, W-CDMA) 4 W (typical at rated operating conditions) —
Modulation Compatibility Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats —
Encapsulamento / Caixa TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount TO-270 WB-14 (Case 1618-02), plastic, flat leads
Contagem de pinos 16 —
Operating Mode Class-AB (multi-stage, externally biased) —
Lead Configuration Flat leads (surface-mount) —
Tipo de montagem Surface Mount (PCB solderable with bottom drain ground plane) Surface Mount (gull-wing flat leads)
Temperatura de operação -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) -40C to +85C (case)
Packaging Type Tape & Reel (per part suffix NR1 suffix convention) —
Status RoHS Compliant (per NXP product family) Compliant
Product Type — RF LDMOS Wideband Integrated Power Amplifier
Frequency Range — 1.805 GHz to 2.05 GHz
Output Power (CW, typical) — 100 W (50 dBm)
Power Gain (typical) — 30 dB
P1dB (typical) — 25 W (44 dBm) CW
Supply Voltage (VDD) — 24 V to 32 V (28 V typical)
Supply Current (typical) — 1.18 A
RF Modulation Support — GSM, GSM EDGE, CDMA, W-CDMA
VSWR Ruggedness — 5:1 stable into mismatch
Spurious (100 mW to 5 W CW) — Below -60 dBc
Lead Finish — e3 (matte tin)
Body Material — Plastic / Epoxy

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