MW7IC2040NR1 vs MW7IC18100NR1 Comparación
Comparación detallada lado a lado de MW7IC2040NR1 por NXP Semiconductors y MW7IC18100NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ ActivoComparación de especificaciones
| Parámetro | MW7IC2040NR1 | MW7IC18100NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $24,20 | $61,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) | — |
| Technology | RF LDMOS (Laterally Diffused MOSFET) | — |
| RF Type | General Purpose / Wideband Integrated Power Amplifier | — |
| Función | Two-stage integrated power amplifier with on-chip matching | — |
| Frequency Range (Application) | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) | — |
| Frequency Range (Characterization) | 100 MHz to 1 GHz | — |
| Supply Voltage (Vdd) | 24 V to 32 V (nominal 28 V) | — |
| Maximum Supply Voltage | 32 V | — |
| Quiescent Supply Current (Idq) | 75 mA | — |
| Small-Signal Gain | 23.5 dB | — |
| Output Power (avg, W-CDMA) | 4 W (typical at rated operating conditions) | — |
| Modulation Compatibility | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats | — |
| Encapsulado / Carcasa | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount | TO-270 WB-14 (Case 1618-02), plastic, flat leads |
| Recuento de pines | 16 | — |
| Operating Mode | Class-AB (multi-stage, externally biased) | — |
| Lead Configuration | Flat leads (surface-mount) | — |
| Tipo de montaje | Surface Mount (PCB solderable with bottom drain ground plane) | Surface Mount (gull-wing flat leads) |
| Temperatura de funcionamiento | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) | -40C to +85C (case) |
| Packaging Type | Tape & Reel (per part suffix NR1 suffix convention) | — |
| Estado RoHS | Compliant (per NXP product family) | Compliant |
| Product Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | — | 1.805 GHz to 2.05 GHz |
| Output Power (CW, typical) | — | 100 W (50 dBm) |
| Power Gain (typical) | — | 30 dB |
| P1dB (typical) | — | 25 W (44 dBm) CW |
| Supply Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Supply Current (typical) | — | 1.18 A |
| RF Modulation Support | — | GSM, GSM EDGE, CDMA, W-CDMA |
| VSWR Ruggedness | — | 5:1 stable into mismatch |
| Spurious (100 mW to 5 W CW) | — | Below -60 dBc |
| Lead Finish | — | e3 (matte tin) |
| Body Material | — | Plastic / Epoxy |