RTAX2000D-CQ352V vs RTAX2000D-1CQ352V Comparação

Comparação detalhada lado a lado de RTAX2000D-CQ352V por Microchip Technology e RTAX2000D-1CQ352V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
RTAX2000D-CQ352V RTAX2000D-CQ352V - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip

RTAX2000D-CQ352V - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip

RTAX2000D-CQ352V ✓ Ativo
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Ativo

Comparação de especificações

Parâmetro RTAX2000D-CQ352V RTAX2000D-1CQ352V
Marca Microchip Technology Microchip Technology
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $2.560,00 $3.950,00
Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Equivalent System Gates 2,000,000 —
Logic Cells 29,568 29,568
Configurable Logic Blocks (CLBs) 19,712 —
User I/O - Inputs 166 —
User I/O - Outputs 166 —
Supply Voltage (Core) 1.425 V to 1.575 V (nominal 1.5 V) —
Technology CMOS, antifuse one-time programmable Digital CMOS, antifuse (nonvolatile)
Encapsulamento CQFP352 ceramic quad flat pack CQFP-352 (CQ352), ceramic
Terminal Pitch 0.500 mm —
Tipo de montagem Surface Mount Surface Mount
Configuration One-time programmable (antifuse) Live at power-up, single-chip, no external configuration device
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
Radiation Tolerance Radiation-tolerant (space-flight applications) —
Application Domain Space-flight systems —
Commercial Baseline Family Actel/Microsemi Axcelerator —
Equivalent Gates — 2,000,000
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Speed Grade — -1
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)
Temperatura de operação — [DATA_NEEDED: Operating Temperature]
Status RoHS — [DATA_NEEDED: RoHS Status]

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