RTAX2000D-CQ352V vs RTAX2000D-1CQ352V Vergleich

Detaillierter Direktvergleich von RTAX2000D-CQ352V von Microchip Technology und RTAX2000D-1CQ352V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000D-CQ352V RTAX2000D-CQ352V - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip

RTAX2000D-CQ352V - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip

RTAX2000D-CQ352V ✓ Aktiv
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000D-CQ352V RTAX2000D-1CQ352V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2.560,00 $3.950,00
Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Equivalent System Gates 2,000,000 —
Logic Cells 29,568 29,568
Configurable Logic Blocks (CLBs) 19,712 —
User I/O - Inputs 166 —
User I/O - Outputs 166 —
Supply Voltage (Core) 1.425 V to 1.575 V (nominal 1.5 V) —
Technology CMOS, antifuse one-time programmable Digital CMOS, antifuse (nonvolatile)
Gehäuse CQFP352 ceramic quad flat pack CQFP-352 (CQ352), ceramic
Terminal Pitch 0.500 mm —
Montageart Surface Mount Surface Mount
Configuration One-time programmable (antifuse) Live at power-up, single-chip, no external configuration device
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
Radiation Tolerance Radiation-tolerant (space-flight applications) —
Application Domain Space-flight systems —
Commercial Baseline Family Actel/Microsemi Axcelerator —
Equivalent Gates — 2,000,000
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Speed Grade — -1
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)
Betriebstemperatur — [DATA_NEEDED: Operating Temperature]
RoHS-Status — [DATA_NEEDED: RoHS Status]

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