RTAX2000S-1CQ352V vs RTAX2000D-1CQ352V Comparação

Comparação detalhada lado a lado de RTAX2000S-1CQ352V por Microchip Technology e RTAX2000D-1CQ352V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
RTAX2000S-1CQ352V RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CQ352V ✓ Ativo
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Ativo

Comparação de especificações

Parâmetro RTAX2000S-1CQ352V RTAX2000D-1CQ352V
Marca Microchip Technology Microchip Technology
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $3.950,00
Equivalent System Gates 2,000,000 gates —
Logic Cells 32,256 cells 29,568
Configurable Logic Blocks (CLBs) 21,504 CLBs —
Process Technology Digital CMOS —
Speed Grade -1 -1
Family RTAX-S/SL Radiation-Tolerant FPGAs —
Encapsulamento CQ352 ceramic QFP, 352 pins CQFP-352 (CQ352), ceramic
Tipo de montagem Surface Mount Surface Mount
Configuration Live at power-up, single-chip Live at power-up, single-chip, no external configuration device
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
Core Voltage [DATA_NEEDED: core voltage] —
I/O Voltage [DATA_NEEDED: I/O voltage] —
Temperatura de operação [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
Radiation Tolerance (TID) [DATA_NEEDED: TID rating] —
Nível MSL [DATA_NEEDED: moisture sensitivity level] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Equivalent Gates — 2,000,000
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Technology — Digital CMOS, antifuse (nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

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