RTAX2000S-1CQ352V vs RTAX2000D-1CQ352V Vergleich

Detaillierter Direktvergleich von RTAX2000S-1CQ352V von Microchip Technology und RTAX2000D-1CQ352V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000S-1CQ352V RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CQ352V ✓ Aktiv
Microchip Technology
RTAX2000D-1CQ352V RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000D-1CQ352V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000S-1CQ352V RTAX2000D-1CQ352V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $3.950,00
Equivalent System Gates 2,000,000 gates —
Logic Cells 32,256 cells 29,568
Configurable Logic Blocks (CLBs) 21,504 CLBs —
Process Technology Digital CMOS —
Speed Grade -1 -1
Family RTAX-S/SL Radiation-Tolerant FPGAs —
Gehäuse CQ352 ceramic QFP, 352 pins CQFP-352 (CQ352), ceramic
Montageart Surface Mount Surface Mount
Configuration Live at power-up, single-chip Live at power-up, single-chip, no external configuration device
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
Core Voltage [DATA_NEEDED: core voltage] —
I/O Voltage [DATA_NEEDED: I/O voltage] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
Radiation Tolerance (TID) [DATA_NEEDED: TID rating] —
MSL-Level [DATA_NEEDED: moisture sensitivity level] —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Equivalent Gates — 2,000,000
CLBs — 19,712
Core Supply Voltage — 1.425 V to 1.575 V (nominal 1.5 V)
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Technology — Digital CMOS, antifuse (nonvolatile)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose — 200 krad (Si)
Screening — RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern