RTAX2000S-1CQ352V vs RTAX2000D-1CQ352V Сравнение
Подробное сравнение бок о бок RTAX2000S-1CQ352V от Microchip Technology и RTAX2000D-1CQ352V от Microchip Technology. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Microchip Technology
RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CQ352V ✓ АктивенMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ АктивенСравнение характеристик
| Параметр | RTAX2000S-1CQ352V | RTAX2000D-1CQ352V |
|---|---|---|
| Бренд | Microchip Technology | Microchip Technology |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $3.950,00 |
| Equivalent System Gates | 2,000,000 gates | — |
| Logic Cells | 32,256 cells | 29,568 |
| Configurable Logic Blocks (CLBs) | 21,504 CLBs | — |
| Process Technology | Digital CMOS | — |
| Speed Grade | -1 | -1 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Корпус | CQ352 ceramic QFP, 352 pins | CQFP-352 (CQ352), ceramic |
| Тип монтажа | Surface Mount | Surface Mount |
| Configuration | Live at power-up, single-chip | Live at power-up, single-chip, no external configuration device |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Core Voltage | [DATA_NEEDED: core voltage] | — |
| I/O Voltage | [DATA_NEEDED: I/O voltage] | — |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Radiation Tolerance (TID) | [DATA_NEEDED: TID rating] | — |
| Уровень MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Equivalent Gates | — | 2,000,000 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Technology | — | Digital CMOS, antifuse (nonvolatile) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |