SST25VF010A-33-4I-SAE vs SST25VF010A-33-4I-SAE-T Comparação

Comparação detalhada lado a lado de SST25VF010A-33-4I-SAE por Microchip Technology e SST25VF010A-33-4I-SAE-T por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
SST25VF010A-33-4I-SAE SST25VF010A-33-4I-SAE - 1Mbit SPI Flash 33MHz 8-SOIC | Microchip

SST25VF010A-33-4I-SAE - 1Mbit SPI Flash 33MHz 8-SOIC | Microchip

SST25VF010A-33-4I-SAE ✓ Ativo
Microchip Technology
SST25VF010A-33-4I-SAE-T SST25VF010A-33-4I-SAE-T - 1Mbit SPI Flash 33MHz 2.7-3.6V | Microchip

SST25VF010A-33-4I-SAE-T - 1Mbit SPI Flash 33MHz 2.7-3.6V | Microchip

SST25VF010A-33-4I-SAE-T ✓ Ativo

Comparação de especificações

Parâmetro SST25VF010A-33-4I-SAE SST25VF010A-33-4I-SAE-T
Marca Microchip Technology Microchip Technology
Categoria Memory ICs Memory ICs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,55 $0,49
Tipo de memória NOR Flash Non-volatile NOR Flash
Tamanho da memória 1 Mbit (128K x 8) 1 Mbit (128K x 8)
Memory Organization 128K x 8 —
Tipo de interface SPI (4-wire, Mode 0 and Mode 3) —
Maximum SPI Clock Frequency 33 MHz —
Supply Voltage (VDD) 2.7 V to 3.6 V —
Active Read Current (typical) 10 mA —
Standby Current (typical) 15 uA —
Sector Size 4 KB 4 KB uniform sectors
Program/Erase Endurance 100,000 cycles per sector —
Data Retention >100 years >= 100 years
Temperatura de operação -40C to +85C (industrial) —
Encapsulamento 8-SOIC (SAE, 0.150") 8-SOIC (SAE, 0.150")
Tipo de montagem Surface Mount Surface Mount
Architecture Sectored SuperFlash split-gate CMOS —
Write Protection Hardware WP# pin and software Status Register —
Nível MSL 1 (unlimited floor life at <30C/85% RH) 1
Status RoHS Compliant —
Interface — SPI (Mode 0 and Mode 3)
Frequência máxima de clock — 33 MHz (up to 80 MHz in high-speed mode per datasheet)
Supply Voltage (VCC) — 2.7 V to 3.6 V
Active Read Current — 10 mA (typical at 33 MHz)
Standby Current — 8 uA (typical)
Program/Erase Cycles — >= 100,000 per sector
Block Erase Sizes — 32 KB and 64 KB
Access Time — 12 ns
Faixa de temperatura de operação — -40C to +85C (Industrial -4I grade)
Lead-Free / RoHS — Lead-Free / RoHS Compliant
Technology — SuperFlash split-gate cell with thick-oxide tunneling injector

Fichas técnicas e recursos

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