SST25VF010A-33-4I-SAE vs SST25VF010A-33-4I-SAE-T 对比
详细并排对比 SST25VF010A-33-4I-SAE 出自 Microchip Technology 和 SST25VF010A-33-4I-SAE-T 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Microchip Technology
SST25VF010A-33-4I-SAE - 1Mbit SPI Flash 33MHz 8-SOIC | Microchip
SST25VF010A-33-4I-SAE ✓ 量产中Microchip Technology
SST25VF010A-33-4I-SAE-T - 1Mbit SPI Flash 33MHz 2.7-3.6V | Microchip
SST25VF010A-33-4I-SAE-T ✓ 量产中规格对比
| 参数 | SST25VF010A-33-4I-SAE | SST25VF010A-33-4I-SAE-T |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.55 | $0.49 |
| 存储器类型 | NOR Flash | Non-volatile NOR Flash |
| 存储容量 | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) |
| Memory Organization | 128K x 8 | — |
| 接口类型 | SPI (4-wire, Mode 0 and Mode 3) | — |
| Maximum SPI Clock Frequency | 33 MHz | — |
| Supply Voltage (VDD) | 2.7 V to 3.6 V | — |
| Active Read Current (typical) | 10 mA | — |
| Standby Current (typical) | 15 uA | — |
| Sector Size | 4 KB | 4 KB uniform sectors |
| Program/Erase Endurance | 100,000 cycles per sector | — |
| Data Retention | >100 years | >= 100 years |
| 工作温度 | -40C to +85C (industrial) | — |
| 封装 | 8-SOIC (SAE, 0.150") | 8-SOIC (SAE, 0.150") |
| 安装类型 | Surface Mount | Surface Mount |
| Architecture | Sectored SuperFlash split-gate CMOS | — |
| Write Protection | Hardware WP# pin and software Status Register | — |
| MSL 等级 | 1 (unlimited floor life at <30C/85% RH) | 1 |
| RoHS 状态 | Compliant | — |
| 接口 | — | SPI (Mode 0 and Mode 3) |
| 最大时钟频率 | — | 33 MHz (up to 80 MHz in high-speed mode per datasheet) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Active Read Current | — | 10 mA (typical at 33 MHz) |
| Standby Current | — | 8 uA (typical) |
| Program/Erase Cycles | — | >= 100,000 per sector |
| Block Erase Sizes | — | 32 KB and 64 KB |
| Access Time | — | 12 ns |
| 工作温度范围 | — | -40C to +85C (Industrial -4I grade) |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |
| Technology | — | SuperFlash split-gate cell with thick-oxide tunneling injector |