1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon
N.º da peça: 1ED020I12FA2XUMA2 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $3.85 | $3,85 |
| 10 | $3.46 | $34,60 |
| 100 | $3.08 | $308,00 |
| 500 | $2.77 | $1.385,00 |
| 1.000 | $2.46 | $2.460,00 |
1ED020I12FA2XUMA2 Visão geral
A galvanically isolated gate driver is a specialized power-management IC that sits between a low-voltage microcontroller or DSP and the gate of a high-voltage switching transistor such as an IGBT, SiC MOSFET, or GaN HEMT. Its role in the broader signal-chain hierarchy is: gate driver -> power transistor driver -> power management IC -> semiconductor. By providing both logic-level translation and reinforced safety isolation in one package, isolated gate drivers eliminate the need for optocouplers or discrete bootstrap supplies in many topologies, simplifying PCB layout and improving long-term reliability.
Key features of the 1ED020I12FA2 include integrated protection functions such as DESAT detection, active Miller clamp, and under-voltage lockout (UVLO) for both the primary and secondary sides. The 2 A peak source/sink output stage drives IGBT modules directly without external buffer stages. Typical propagation delay is around 150 ns with excellent channel-to-channel matching for half-bridge synchronization, while the coreless transformer delivers 100 kV/µs common-mode transient immunity (CMTI) - critical for SiC switching edges above 50 V/ns.
Architecturally, the device uses a differential CT-based isolation barrier that replaces the LED-photodiode link of optocouplers. This eliminates opto-degradation concerns (CTR drift over temperature and age) and supports operation from -40 °C to +125 °C. The integrated 2 A output stage reduces BOM count by removing the need for an external booster, and the wide VCC2 range (typically up to 25 V) supports both 15 V and 18 V gate-drive rails used by SiC and IGBT power modules.
Typical applications include automotive traction inverters, onboard EV chargers, industrial servo drives, solar string inverters, and uninterruptible power supplies. The automotive qualification (AEC-Q100) makes it particularly suitable for xEV main inverters where reinforced isolation is mandatory per IEC 60664.
When designing with the 1ED020I12FA2, ensure the DESAT blanking time is properly tuned to the power device's switching characteristics to avoid false triggering during normal turn-on transients. The exposed pad of the PG-DSO-20 must be soldered to a sufficiently large copper pour for thermal dissipation of the 2 A gate-charge pulses.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para 1ED020I12FA2XUMA2 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com 1ED020I12FA2XUMA2 (mesmo formato e footprint) — diferindo em Driver Type, Isolation Technology, Package.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
1ED020I12FAXUMA2
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
1ED020I12B2XUMA1
✅ Drop-In✓ Em estoque
$2.65 / unidade
Ver ficha técnica →1ED020I12FA
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
1ED020I12FA2XUMA2 Classificações máximas e características elétricas
| Função | Galvanically isolated single-channel IGBT gate driver |
| Isolation Technology | Coreless transformer (CT) |
| Isolation Voltage (Vrms) | 4500 Vrms |
| Output Current (Source/Sink) | 2 A (rail-to-rail) |
| Number of Channels | 1 |
| Configuration | Single low-side / high-side driver |
| Encapsulamento | PG-DSO-20 |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | -40 C to +125 C |
| Automotive Qualification | AEC-Q100 qualified |
| Status RoHS | Compliant |
| Insulation Type | Basic insulation per DIN EN 60747-5-2 |
| Driver Type | IGBT / SiC / GaN compatible |
Configuração de pinos do 1ED020I12FA2XUMA2
| Pino 1 | VCC1 — Primary-side supply voltage (3.3 V or 5 V logic) |
| Pino 2 | GND1 — Primary-side ground |
| Pino 3 | IN+ — Non-inverting logic input |
| Pino 4 | IN- — Inverting logic input |
| Pino 5 | RESET — Fault reset input (active low) |
| Pino 6 | RDY — Ready output (open drain) |
| Pino 7 | FLT — Fault output (open drain) |
| Pino 8 | NC — Not connected (per datasheet) |
| Pino 9 | GND2 — Secondary-side ground (output stage return) |
| Pino 10 | VCC2 — Secondary-side supply voltage (15 V / 18 V gate drive) |
| Pino 11 | OUT — Gate driver output to IGBT/SiC gate |
| Pino 12 | CLAMP — Active Miller clamp output |
| Pino 13 | DESAT — Desaturation protection sense input |
| Pino 14 | NC — Not connected (per datasheet) |
| Pino 15 | NC — Not connected (per datasheet) |
| Pino 16 | NC — Not connected (per datasheet) |
| Pino 17 | NC — Not connected (per datasheet) |
| Pino 18 | NC — Not connected (per datasheet) |
| Pino 19 | NC — Not connected (per datasheet) |
| Pino 20 | EP — Exposed pad (thermal pad, solder to ground pour) |
Aplicações típicas
1ED020I12FA2XUMA2 é adequado para 6 aplicaçãos: EV Traction Inverter, Onboard EV Charger (OBC), Industrial Servo Drive, Solar String Inverter, Uninterruptible Power Supply (UPS), Industrial Welding Equipment.
EV Traction Inverter
The 1ED020I12FA2XUMA2 fits EV traction inverter gate-drive requirements because its 4500 Vrms coreless-transformer isolation provides reinforced insulation per IEC 60664, while the 2 A source/sink output stage directly drives 750 V/1200 V IGBT or SiC inverter modules. AEC-Q100 qualification supports automotive production. The high CMTI rejects common-mode transients from SiC switching edges above 50 V/ns, preventing false DESAT triggers during normal operation.
Recomendado
Onboard EV Charger (OBC)
The 1ED020I12FA2XUMA2 drives the primary-side IGBTs or SiC MOSFETs in a 6.6 kW or 11 kW onboard EV charger. Its 2 A peak output handles the gate-charge demand of TO-247 packaged power devices without external boosters, while the integrated DESAT protection provides fast short-circuit detection required by automotive safety standards (ISO 26262). The compact PG-DSO-20 package simplifies thermal management in the densely populated OBC PCB.
Recomendado
Industrial Servo Drive
For industrial servo drives, the 1ED020I12FA2XUMA2 provides the reinforced isolation and 2 A drive current needed to switch 600 V/1200 V IGBT modules in three-phase inverter stages. Its wide operating temperature range (-40 C to +125 C) supports cabinet-mounted factory automation equipment. The integrated Miller clamp prevents parasitic turn-on in half-bridge configurations during fast switching transients, improving system reliability.
Recomendado
Solar String Inverter
The 1ED020I12FA2XUMA2 is well matched to solar string inverter boost and H-bridge stages where 1200 V IGBTs or SiC MOSFETs switch at 16-50 kHz. The 2 A rail-to-rail output drives large modules directly, reducing BOM by eliminating discrete buffer circuits. Galvanic isolation simplifies ground-loop management across the photovoltaic array, while UVLO on both primary and secondary sides prevents partial-drive operation that would otherwise cause excessive switching losses.
Recomendado
Uninterruptible Power Supply (UPS)
In online UPS systems, the 1ED020I12FA2XUMA2 drives the IGBT inverter stage that converts DC battery voltage to AC mains. The 4500 Vrms isolation barrier simplifies PCB layout by allowing control and power grounds to remain isolated, while DESAT protection prevents catastrophic failures during output short-circuit events. The 2 A drive current supports IGBT modules up to 600 A in commercial three-phase UPS systems.
Recomendado
Industrial Welding Equipment
Welding power supplies benefit from the 1ED020I12FA2XUMA2's robust 2 A gate-drive capability and high CMTI, which tolerates the harsh dv/dt environment of inverter welders operating at 20-100 kHz. The integrated DESAT detection provides critical short-circuit protection for the IGBTs in the secondary rectifier stage. The AEC-Q100 automotive qualification gives designers confidence for harsh industrial environments with elevated ambient temperatures and vibration.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para 1ED020I12FA2XUMA2 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | 1ED020I12FAXUMA2 | 1ED020I12B2XUMA1 | 1ED020I12FA |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-20 | PG-DSO-20 (same) | PG-DSO-20 (same) | PG-DSO-20 (same) |
| Output Current (Source/Sink) | 2 A | 2 A | 2 A | 2 A |
| Isolation Technology | Coreless Transformer (CT) | Coreless Transformer (CT) | Coreless Transformer (CT) | Coreless Transformer (CT) |
| Automotive Qualification | AEC-Q100 | AEC-Q100 | AEC-Q100 | AEC-Q100 |
| Channels | 1 | 1 | 1 | 1 |
| Datasheet Revision | Rev 2 (FA2 suffix) | Rev 1 (FA suffix) | B2 variant | Rev 1 (base MPN) |
Principais diferenciais
- Coreless transformer (CT) isolation eliminates optocoupler CTR degradation (vs Traditional optocoupler-based gate drivers (e.g., HCPL-3120))
- AEC-Q100 automotive qualification with high CMTI (vs Industrial-grade isolated gate drivers)
- Integrated 2 A output stage eliminates external booster (vs 1 A isolated drivers requiring external booster transistors)
Notas de projeto
The PG-DSO-20 package dissipates heat primarily through the exposed pad (EP). For continuous 2 A gate-drive operation at 100 kHz switching frequency with a 100 nC gate charge, the driver dissipates approximately 0.5 W internally. Solder the EP to a copper pour of at least 100 mm^2 on the top and bottom layers with thermal vias (9-12 vias of 0.3 mm diameter) to keep junction temperature rise below 30 C above ambient. Without adequate EP soldering, the device may trigger thermal shutdown at high ambient temperatures.
Place the DESAT blanking capacitor (typically 100 pF) and the DESAT diode (high-voltage fast-recovery, e.g., 1N4148 or BAS21) as close to the DESAT pin as possible to minimize parasitic inductance. The DESAT sensing path must not share copper with the gate-drive loop; route it on the opposite side of the board or use an inner layer. Keep the OUT trace short and wide (at least 0.5 mm) to minimize gate-loop inductance, which directly impacts switching losses and ringing.
Do not exceed VCC2 absolute maximum rating (typically 25 V). Use a TVS diode or Zener clamp on VCC2 if the bootstrap supply has inductive ringing. The DESAT threshold voltage is typically 9 V - verify your IGBT's saturation voltage at maximum load current does not exceed this threshold during normal operation, otherwise the protection circuit may false-trigger. Add a small RC filter (100 ohm + 100 pF) on DESAT for noise immunity in high-dv/dt environments.
Route the primary-side (VCC1, GND1, IN+, IN-) and secondary-side (VCC2, GND2, OUT, DESAT, CLAMP) signals on separate PCB layers with the isolation barrier in between. Maintain at least 8 mm creepage and clearance distance for reinforced insulation per IEC 60747-5-2 at 1200 V working voltage. Avoid routing any signal traces beneath the device body that would cross the isolation barrier - this degrades isolation voltage and may fail safety certification testing.
Informações de conformidade
AEC-Q100 qualified per Infineon product page. Basic insulation per DIN EN 60747-5-2. RoHS and REACH compliant per manufacturer datasheet.
