1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon
MPN: 1ED020I12B2XUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.62 | $36.20 |
| 100 | $3.24 | $324.00 |
| 500 | $2.91 | $1,455.00 |
| 1,000 | $2.65 | $2,650.00 |
1ED020I12B2XUMA1 Overview
An IGBT gate driver is a specialized power-management IC that translates low-power logic-level PWM signals from a microcontroller or DSP into the high-current, high-voltage drive required to switch the gate of an insulated-gate bipolar transistor (IGBT). Isolated gate drivers add galvanic isolation between the low-voltage control domain and the high-voltage power stage, protecting the controller from high dV/dt transients and ground-potential differences. The 1ED020I12-B2 family targets the gate driver -> driver IC -> power management IC -> semiconductor hierarchy, and is widely used where 1200 V switches are switched at frequencies from a few kHz up to several hundred kHz.
Key specifications include 2 A typical source/sink output current, 35 ns typical propagation delay, Β±5 ns channel-to-channel matching (single-channel part), 4500 Vrms isolation per UL 1577, and an integrated Miller clamp FET capable of sinking 2 A. The DESAT detection threshold is programmable via an external resistor and blanking capacitor, supporting IGBT Vce(sat) monitoring at typical 7 V threshold. The wide-body 300-mil DSO-16-15 package provides 8 mm creepage between primary and secondary sides, satisfying reinforced isolation requirements per IEC 60747-17.
Architecturally, the 1ED020I12-B2 uses Infineon's coreless-transformer (CT) isolation technology, transmitting PWM and fault signals across a galvanic barrier using differential pulse-edge encoding. This avoids the wear-out mechanisms of optocoupler LEDs while meeting UL 1577 and IEC 60747-17 reinforced insulation targets. The on-chip DESAT comparator monitors Vce of the driven IGBT during the on-state; if saturation voltage exceeds the programmed threshold (typical 7 V) for the blanking time, the driver asserts the fault output and latches off the gate, protecting the switch from short-circuit destruction.
Typical applications include three-phase solar inverters, industrial motor drives (servo and VFD), UPS systems, and induction-heating power stages. In each of these, the part drives 1200 V IGBT half-bridge modules where reinforced isolation, DESAT protection, and Miller clamping directly translate into higher system reliability and faster short-circuit turn-off. Engineers also deploy it in SiC MOSFET half-bridge and full-bridge topologies up to the part's 1200 V absolute maximum rating.
When designing with the 1ED020I12-B2, select the bootstrap supply carefully: a 100 nF X7R bypass is recommended on VCC1/VCC2, and the Miller-clamp pin must be tied directly to the IGBT gate via a low-inductance trace. Program the DESAT blanking time to at least 1 Β΅s to avoid false trips during IGBT turn-on. The active-high fault output is open-drain and should be pulled up to VCC1 with a 10 kΞ© resistor. According to Infineon datasheet v02_02, the part is rated for -40 Β°C to +125 Β°C operating junction temperature and is MSL-3 rated at 260 Β°C peak reflow.
This page synthesizes distributor pricing from DigiKey/Mouser/LCSC, drop-in alternatives including the F2 variant and cross-brand equivalents, and practical design notes not collected in a single place in the manufacturer datasheet.
Drop-in alternatives for 1ED020I12B2XUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1ED020I12F2XUMA1
β Drop-Inπ Reference alternative (not in catalog)
1ED020I12-B2
β Drop-Inπ Reference alternative (not in catalog)
1ED020I12B2XUMA1 Maximum Ratings & Electrical Characteristics
| Driver Type | Single-channel IGBT gate driver, galvanically isolated |
| Isolation Technology | Coreless transformer (magnetic coupling) |
| Isolation Voltage (Vrms) | 4500 Vrms |
| Number of Channels | 1 |
| Output Current (typ.) | 2 A source / 2 A sink |
| Propagation Delay (typ.) | 35 ns |
| Supported Switch Voltage Class | Up to 1200 V IGBT / SiC MOSFET |
| DESAT Protection | Yes (programmable threshold) |
| Miller Clamp | Yes (integrated 2 A clamp FET) |
| Input Supply (VCC1) | 5 V (logic side) |
| Output Supply (VCC2) | Unipolar 15 V or bipolar -8.5 V / 15 V |
| Package | PG-DSO-16-15 (300 mil wide-body DSO-16) |
| Creepage Distance | 8 mm |
| Operating Temperature | -40 Β°C to +125 Β°C |
| Mounting Type | Surface Mount |
| MSL Level | MSL-3 (per JEDEC J-STD-020) |
| Compliance | RoHS compliant |
1ED020I12B2XUMA1 Pin Configuration
| Pin 1 | VCC1 β Primary-side 5 V logic supply |
| Pin 2 | GND1 β Primary-side ground |
| Pin 3 | IN+ β Non-inverting PWM input |
| Pin 4 | IN- β Inverting PWM input |
| Pin 5 | NC β Not connected (per datasheet) |
| Pin 6 | NC β Not connected (per datasheet) |
| Pin 7 | /FLT β Open-drain fault output, active low |
| Pin 8 | RDY β Power-good / ready output, active high |
| Pin 9 | VCC2 β Secondary-side 15 V driver supply |
| Pin 10 | GND2 β Secondary-side ground |
| Pin 11 | VEE2 β Secondary-side negative supply (bipolar mode) |
| Pin 12 | OUT β Gate driver output to IGBT gate |
| Pin 13 | CLAMP β Miller clamp output |
| Pin 14 | DESAT β Desaturation sensing input |
| Pin 15 | NC β Not connected (per datasheet) |
| Pin 16 | NC β Not connected (per datasheet) |
Typical Applications
1ED020I12B2XUMA1 is suitable for 7 applications: Three-Phase Solar String Inverters, Industrial Motor Drives (VFD / Servo), Uninterruptible Power Supplies (UPS), Induction Heating Power Stages, SiC MOSFET Half-Bridge Modules, Welding Power Converters, Renewable Energy Microinverters.
Three-Phase Solar String Inverters
The 1ED020I12B2XUMA1 drives 1200 V IGBT modules in three-phase photovoltaic string inverters rated 5 kW to 50 kW. Its 2 A source/sink current switches 50-200 A modules at 16-32 kHz with sub-50 ns propagation delay, while the integrated DESAT short-circuit detector trips within microseconds to protect against DC-side faults. The 4500 Vrms reinforced isolation and 8 mm creepage support pollution-degree-2 outdoor installations when conformal coating is applied. Per Infineon datasheet v02_02, the part is qualified for industrial-grade solar inverter designs with 20-year service life targets.
Recommended
Industrial Motor Drives (VFD / Servo)
The 1ED020I12B2XUMA1 is a common choice for variable-frequency drives and servo amplifiers controlling 3-phase induction or PMSM motors up to 15 kW. Its single-channel isolated architecture requires three driver ICs per inverter bridge, but the 2 A source/sink capability directly switches most 1200 V/75 A IGBT modules at 8-16 kHz PWM. The Miller clamp suppresses cross-conduction caused by high dV/dt in long-cable installations, and the DESAT fault path ties back to the DSP /FLT input for hardware desaturation protection with sub-5 Β΅s shutdown.
Recommended
Uninterruptible Power Supplies (UPS)
The 1ED020I12B2XUMA1 drives 1200 V IGBT half-bridge modules in online double-conversion UPS systems rated 10 kVA to 100 kVA. Its 4500 Vrms reinforced isolation provides the reinforced insulation barrier required between the line-side rectifier/inverter and the SELV control logic, while the integrated DESAT detects output short-circuit events within microseconds and latches the gate off. The wide VCC2 range (12 V to 18 V, or bipolar Β±8 V/15 V) supports both unipolar and bipolar gate-drive topologies favored in high-power UPS designs.
Recommended
Induction Heating Power Stages
Resonant induction-heating inverters in the 5-50 kW range use the 1ED020I12B2XUMA1 to drive 1200 V IGBTs at 20-100 kHz with hard-switched or ZVS topologies. The 35 ns propagation delay and 2 A peak output enable clean gate transitions at high di/dt, while the Miller clamp prevents shoot-through during resonant tank zero-crossings. Engineers often pair three 1ED020I12B2XUMA1 drivers with a single IGBT bridge and resonant tank capacitor, using the /FLT output to gate the RF oscillator through a hardware interlock.
Recommended
SiC MOSFET Half-Bridge Modules
The 1ED020I12B2XUMA1 drives 1200 V SiC MOSFET modules in EV traction inverters, on-board chargers, and industrial DC-DC converters. SiC MOSFETs switch at dV/dt > 50 kV/Β΅s, and the part's 2 A source/sink current plus integrated Miller clamp suppresses parasitic turn-on caused by miller current through Cgd. The 4500 Vrms isolation suits the reinforced barrier between the 800 V battery domain and the SELV MCU domain, and the 35 ns propagation delay supports SiC PWM frequencies up to 100 kHz without duty-cycle distortion.
Recommended
Welding Power Converters
Inverter-based MIG/TIG welding machines, the 1ED020I12B2XUMA1 drives 1200 V IGBTs in the primary full-bridge of the welding converter rated up to 20 kW. The DESAT fault comparator detects arc-strike short-circuit events within microseconds and latches off the gate to protect the IGBT from thermal runaway. The part's wide 8 mm creepage PG-DSO-16-15 wide-body package tolerates the harsh electrical noise environment of welding inverters, and the 4500 Vrms isolation provides the reinforced barrier between primary and secondary sides required for IEC 60974-1 compliance.
Recommended
Renewable Energy Microinverters
Although optimized for higher-power stages, the 1ED020I12B2XUMA1 also serves in 1.5 kW to 5 kW microinverters where a single 1200 V IGBT half-bridge replaces traditional Si MOSFETs. The 4500 Vrms isolation eliminates the need for a separate gate-drive transformer, reducing BOM cost and PCB area by approximately 30 %. The integrated DESAT and Miller clamp functions further simplify the analog front-end, and the -40 Β°C to +125 Β°C operating range tolerates outdoor rooftop environments when conformal coating and potting are applied.
Recommended
Recommended Products Summary
Engineering reference data for 1ED020I12B2XUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1ED020I12F2XUMA1 | 1ED020I12-B2 |
|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-16-15 (300 mil wide-body) | PG-DSO-16-15 (300 mil wide-body) - same | PG-DSO-16-15 (300 mil wide-body) - same |
| Isolation Voltage (Vrms) | 4500 Vrms | 4500 Vrms | 4500 Vrms |
| Output Current (typ.) | 2 A source / 2 A sink | 2 A / 2 A | 2 A / 2 A |
| Propagation Delay (typ.) | 35 ns | 35 ns | 35 ns |
| DESAT Protection | Yes (programmable) | Yes (programmable) | Yes (programmable) |
| Miller Clamp | Yes (integrated 2 A) | Yes (integrated 2 A) | Yes (integrated 2 A) |
| Reel-pack Orientation | B2 | F2 (different orientation, identical die) | Base (no reel suffix) |
Key Differentiators
- Identical drop-in part available with different reel orientation (vs 1ED020I12F2XUMA1)
- Reinforced 4500 Vrms isolation with coreless-transformer technology (vs 1ED020I12-B2 (base))
- Integrated 2 A Miller clamp reduces BOM cost and PCB area (vs 1ED020I12-B2 (base))
Design Notes
Bypass VCC1 (pin 1) with a 100 nF X7R ceramic capacitor and VCC2 (pin 9) with a 1 Β΅F X7R plus 100 nF parallel combination, both placed within 5 mm of the supply pins. The VCC2 rail should be sourced from a low-ESR linear regulator or isolated DC-DC converter capable of delivering 50 mA continuous plus peak gate-charge current. For bipolar gate drive (-8 V / +15 V), add a 100 nF bypass on VEE2 (pin 11) and place a common-mode choke on VCC2/VEE2 to suppress high-frequency ringing.
Maintain 8 mm creepage between primary-side pins 1-8 and secondary-side pins 9-16 by routing all primary traces on one side of the package and secondary traces on the other. Route the gate-drive loop (VCC2 -> OUT -> IGBT gate -> emitter -> GND2) with a total loop inductance under 20 nH; place the gate resistor (typically 10-33 Ξ©) within 5 mm of the OUT pin. Keep the DESAT sense traces (pin 14 to IGBT collector) short and shielded to prevent false tripping from high dV/dt noise.
Program the DESAT blanking time to at least 1 Β΅s using the external blanking capacitor on pin 14, since 1200 V IGBTs exhibit transient Vce overshoot during turn-on that can otherwise falsely trip the comparator. Estimated: with a 100 pF blanking capacitor and 1 mA internal current source, blanking time β 1 Β΅s. Always connect the Miller-clamp pin (13) directly to the IGBT gate via a dedicated trace - omitting the clamp will allow miller-induced shoot-through in half-bridge layouts.
Estimated: the PG-DSO-16-15 wide-body package has a junction-to-ambient thermal resistance of approximately 90 Β°C/W on a 1 oz copper 2-layer board. At a 50 mA quiescent current draw from a 15 V VCC2 rail, internal dissipation is 0.75 W and junction temperature rise is 67 Β°C above ambient. For high-temperature designs above 85 Β°C ambient, increase the VCC2 copper pour to at least 1 square inch to keep the junction below 125 Β°C.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Industrial-grade (-40 Β°C to +125 Β°C); not AEC-Q100 qualified. Reinforced insulation per UL 1577 and IEC 60747-17.
