DRV8350HRTVR - 102V 3-Phase Smart Gate Driver | Texas Instruments
N.º da peça: DRV8350HRTVR ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $4.85 | $4,85 |
| 10 | $4.36 | $43,60 |
| 100 | $3.88 | $388,00 |
| 500 | $3.49 | $1.745,00 |
| 1.000 | $3.1 | $3.100,00 |
DRV8350HRTVR Visão geral
What is a three-phase smart gate driver? A smart gate driver is an integrated circuit that sits between a microcontroller (MCU) and the discrete power MOSFETs (or GaN/IGBTs) of a three-phase inverter. It level-shifts low-voltage PWM signals to the high-side gate drive supply, provides strong gate sourcing/sinking currents for fast switching, and typically includes protection features such as undervoltage lockout, dead-time insertion, and shoot-through prevention. Smart gate drivers are a sub-category of motor driver ICs, which themselves fall under the broader power management and motion control semiconductor taxonomy.
Key features include a hardware (HW) interface variant (no SPI), integrated 3-phase charge pump for 100% duty-cycle support, adjustable dead time, and protection functions including VDS overcurrent sensing (via external shunt), gate-drive undervoltage lockout (UVLO), and thermal shutdown. The integrated dual LDO (5 V and 3.3 V) supplies the MCU and housekeeping circuits without external regulators, simplifying BOM. The hardware interface uses six PWM inputs (3x high-side, 3x low-side) plus enable and fault flags.
Typical applications include field-oriented control (FOC) of BLDC/PMSM motors in e-bikes, drones, cordless tools, and small industrial pumps; sinusoidal current control of appliance motors; and trapezoidal commutation of ceiling fans and pumps. The DRV8350H variant is preferred when the design MCU already performs current control and only needs gate-drive and protection, eliminating SPI register overhead.
Design considerations include thermal management: at 1 A continuous gate current and high switching losses, the 32-pin WQFN EP package requires an exposed thermal pad with substantial copper pour. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para DRV8350HRTVR — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com DRV8350HRTVR (mesmo formato e footprint) — diferindo em Package, Product Type, Interface, Operating Temperature Range, MSL Level.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
DRV8353HRTVR
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
DRV8350FSRTAR
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
DRV8350RSRTAR
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
DRV8350HRTVT
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
DRV8350HRTVR Classificações máximas e características elétricas
| Product Type | 3-phase smart gate driver (HW interface) |
| Number of Half-Bridges | 3 |
| Peak Gate Source Current | 1 A |
| Peak Gate Sink Current | 2 A |
| Maximum Supply Voltage | 102 V |
| Tensão de alimentação de operação | 6 V to 95 V |
| Integrated Bootstrap | Yes (with charge pump for 100% duty) |
| Integrated LDO | Dual LDO (5 V and 3.3 V) |
| Interface | Hardware (HW) - 6 PWM inputs |
| Current Shunt Amplifier | Not integrated (HW variant) |
| Faixa de temperatura de operação | -40C to +125C |
| Encapsulamento | 32-WQFN (RTV) 5x5 mm with exposed pad |
| Tipo de montagem | Surface Mount |
| Nível MSL | 2 (per JEDEC J-STD-020) |
| Status RoHS | Compliant |
| Dead-Time Control | Adjustable, integrated |
| Protection Features | UVLO, thermal shutdown, shoot-through prevention, VDS/OCP |
Configuração de pinos do DRV8350HRTVR
| Pino 1 | GHB — High-side gate drive for phase B |
| Pino 2 | SHB — Phase B source (half-bridge node) |
| Pino 3 | GLB — Low-side gate drive for phase B |
| Pino 4 | SLB — Phase B low-side source |
| Pino 5 | GHC — High-side gate drive for phase C |
| Pino 6 | SHC — Phase C source (half-bridge node) |
| Pino 7 | GLC — Low-side gate drive for phase C |
| Pino 8 | SLC — Phase C low-side source |
| Pino 9 | GHA — High-side gate drive for phase A |
| Pino 10 | SHA — Phase A source (half-bridge node) |
| Pino 11 | GLA — Low-side gate drive for phase A |
| Pino 12 | SLA — Phase A low-side source |
| Pino 13 | GND — Ground |
| Pino 14 | VCP — Charge pump output |
| Pino 15 | VM — Main power supply (6-95V) |
| Pino 16 | VGLS — Low-side gate drive supply |
| Pino 17 | VGHS — High-side gate drive supply |
| Pino 18 | BST_A — Bootstrap for phase A high-side |
| Pino 19 | BST_B — Bootstrap for phase B high-side |
| Pino 20 | BST_C — Bootstrap for phase C high-side |
| Pino 21 | 5V — 5-V LDO output |
| Pino 22 | 3V3 — 3.3-V LDO output |
| Pino 23 | IDRIVE — Gate drive current setting |
| Pino 24 | VDS — VDS overcurrent threshold setting |
| Pino 25 | nFAULT — Fault indicator (active-low open-drain) |
| Pino 26 | EN — Enable (active-high) |
| Pino 27 | INHA — PWM input for high-side phase A |
| Pino 28 | INLA — PWM input for low-side phase A |
| Pino 29 | INHB — PWM input for high-side phase B |
| Pino 30 | INLB — PWM input for low-side phase B |
| Pino 31 | INHC — PWM input for high-side phase C |
| Pino 32 | INLC — PWM input for low-side phase C |
Aplicações típicas
DRV8350HRTVR é adequado para 6 aplicaçãos: E-Bike / E-Scooter BLDC Motor Control, Cordless Power Tools (Drills, Saws, Blowers), Industrial BLDC Pumps and Fans, Drones and Multirotor UAVs, White Goods - Washing Machines and Dishwashers, Robotics and AGV Drive Wheels.
E-Bike / E-Scooter BLDC Motor Control
The DRV8350HRTVR is well-suited for 36-V and 48-V e-bike/e-scooter traction motor inverters using BLDC/PMSM motors up to ~3 kW continuous. Its 102-V maximum supply tolerates 13S (48-V) lithium packs with regen-braking transients, while the integrated dual LDO (5 V and 3.3 V) supplies the host MCU and Hall-sensor circuitry without an external buck. The hardware PWM interface accepts 6-step or V/F commutation from low-cost MCUs. Designers typically pair it with 60-V or 80-V MOSFETs in a 3-phase half-bridge, achieving >95% inverter efficiency. The exposed thermal pad and 1 A/2 A gate drive enables 50 kHz PWM at moderate dead loss.
Recomendado
Cordless Power Tools (Drills, Saws, Blowers)
Cordless power tools run on 18-V to 72-V Li-ion packs and use high-RPM BLDC motors for high power density. The DRV8350HRTVR's wide 6-V to 95-V operating range covers every common tool battery platform (5S to 13S), and the integrated charge pump enables 100% duty-cycle high-side drive essential for full-speed operation. Its 1 A source / 2 A sink peak current drives large TO-220 or DFN MOSFETs at 50-100 kHz PWM, minimizing switching loss and improving runtime. Hardware (HW) interface variants simplify firmware and reduce MCU cost - typical designs pair with low-cost Cortex-M0 MCUs.
Recomendado
Industrial BLDC Pumps and Fans
Industrial pumps and fans use 3-phase PMSM/BLDC motors requiring sensorless FOC for variable flow/pressure control. The DRV8350HRTVR's hardware interface accepts the 6-PWM outputs directly from a sensorless FOC controller IC or DSP, with integrated VDS overcurrent protection safeguarding against pump blockage stall events. The 102-V supply rating enables direct connection to industrial 24-V, 48-V, and 72-V DC bus rails without pre-regulation. The exposed-pad WQFN-32 provides adequate thermal dissipation for continuous-duty industrial operation with 1 square inch of copper pour on the bottom layer.
Recomendado
Drones and Multirotor UAVs
Multirotor drones use high-KV BLDC motors spinning up to 30,000 RPM with sinusoidal FOC for low-noise, high-efficiency propulsion. The DRV8350HRTVR's small 5x5 mm WQFN-32 footprint fits in the tight ESC (electronic speed controller) PCB envelope, while its 1 A/2 A gate drive handles the fast-switching 80-V or 100-V MOSFETs required for high-frequency operation. The integrated 3.3-V LDO supplies the small Cortex-M0 ESC MCU directly from the battery. HW interface enables direct PWM input from the flight controller without SPI register configuration, minimizing boot time at power-on.
Recomendado
White Goods - Washing Machines and Dishwashers
Modern washing machines and dishwashers use direct-drive PMSM motors with sensorless FOC for variable-speed drum/pump control, replacing noisy universal motors. The DRV8350HRTVR supports 110-V or 220-V rectified mains input through its 102-V supply limit, paired with 600-V IGBTs or 600-V superjunction MOSFETs. The integrated 5-V/3.3-V LDO eliminates external housekeeping converters, reducing BOM cost in price-sensitive appliances. Hardware PWM inputs accept signals from the appliance MCU; overcurrent protection via VDS sensing prevents damage during locked-rotor or unbalanced-load conditions.
Recomendado
Robotics and AGV Drive Wheels
Autonomous mobile robots (AMRs) and AGV drive wheels use gear-driven BLDC motors for precise position and velocity control. The DRV8350HRTVR's hardware interface accepts the PWM outputs from a motor-control MCU running field-oriented control, with VDS overcurrent sensing detecting collision stalls instantly. The 102-V supply supports 24-V and 48-V battery systems used in warehouse robots. The exposed-pad WQFN-32 package provides adequate thermal dissipation for continuous duty in 24/7 AGV operation, and the integrated charge pump enables 100% duty-cycle braking for regenerative energy recovery.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para DRV8350HRTVR — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | DRV8353HRTVR | DRV8350FSRTAR | DRV8350RSRTAR | DRV8350HRTVT | DRV8323RSRGZR |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 32-WQFN (RTV) 5x5mm | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 32-WQFN (RTV) 5x5mm - same | 40-VQFN (RGZ) 7x7mm - DIFFERENT |
| Maximum Supply Voltage | 102 V | 102 V | 102 V | 102 V | 102 V | 60 V |
| Peak Gate Source Current | 1 A | 3 A | 1 A | 1 A | 1 A | 1 A |
| Peak Gate Sink Current | 2 A | 6 A | 2 A | 2 A | 2 A | 2 A |
| Interface | Hardware PWM (6 inputs) | Hardware PWM | Hardware PWM + current sense | SPI | Hardware PWM (same die) | SPI |
| Integrated Current Shunt Amplifier | No (HW variant) | Optional | Yes (3 amplifiers) | Yes (SPI variant) | No (HW variant) | Yes (3 amplifiers) |
| Integrated Dual LDO | Yes (5V and 3.3V) | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Highest maximum supply voltage in DRV835x family (102 V) (vs DRV8323RSRGZR)
- Integrated dual LDO (5V and 3.3V) eliminates two external regulators (vs DRV8301DCAR)
- HW interface variant - no SPI register configuration required (vs DRV8350RSRTAR)
Notas de projeto
The 32-WQFN (RTV) package has an exposed thermal pad (EP) that must be soldered to a top-layer copper pour of at least 1 square inch (645 mm^2) for rated operation. Estimated: at 100 kHz PWM into 80-V MOSFETs with Qg=30 nC and IDRIVE=1 A source, gate-drive dissipation is ~0.3 W per phase (3 W total), and at full VM (95 V) with the charge pump running the EP may dissipate ~0.5 W. Junction temperature rise above ambient is approximately 25C with a 1 sq-in copper pour on a 1-oz 4-layer PCB. Always connect EP to GND with at least 9 thermal vias (0.3 mm drill, 0.5 mm pitch) for heat transfer to inner copper planes.
Place the VM bulk capacitor (at least 10 uF X7R ceramic + 100 uF electrolytic) within 5 mm of the VM pin to handle the high di/dt of the half-bridge switching node. The bootstrap capacitors (BST_A/B/C) must be 100 nF X7R ceramic placed within 2 mm of each BST pin to ensure clean high-side gate drive at 100% duty. The three-phase switch-node traces (SHA/SHB/SHC) should be wide (at least 2 mm) and routed directly to the MOSFET drains to minimize parasitic inductance. Keep the charge-pump flying capacitor (VCP, typically 1 uF) close to the VCP and VM pins.
Do not exceed 102 V on the VM pin - use a 100-V TVS (e.g., SMAJ100A) or RC damper for inductive transients from long motor cable harnesses. The IDRIVE pin voltage sets gate drive strength and VDS threshold simultaneously; use the recommended resistor-divider from the datasheet to set VDS_OCP at the desired MOSFET current limit. Always sequence VM power on before the MCU 3V3 LDO output is loaded - if the MCU starts before VM, the charge pump may not start cleanly causing a fault latched at nFAULT. Reset the fault by toggling EN pin low for >1 us.
Route the high-side gate drive return paths (SHx node) directly to the source of the high-side MOSFET - do NOT route through the bottom-layer GND plane (causes ground bounce and possible shoot-through). The PWM inputs (INHx/INLx) should be routed as a matched 50 ohm microstrip from the MCU to minimize ringing; add 22-ohm series damping resistors at the DRV8350 PWM pins if the trace is longer than 25 mm. Place the nFAULT pull-up resistor (10 kohm to 3V3) close to the DRV8350 to prevent false fault triggers from noise.
Informações de conformidade
RoHS and REACH compliant per TI product page. Not AEC-Q100 qualified - DRV8350 family is not automotive grade; refer to TI automotive motor driver portfolio for AEC-Q100 options. Halogen-free mold compound, lead-free (Pb-free) plating, MSL Level 2 per JEDEC J-STD-020.
