IPN70R360P7SATMA1 - 700V 360mΩ CoolMOS P7 MOSFET | Infineon
N.º da peça: IPN70R360P7SATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.18 | $1,18 |
| 10 | $1.06 | $10,60 |
| 100 | $0.95 | $95,00 |
| 500 | $0.84 | $420,00 |
| 1.000 | $0.72 | $720,00 |
| 3.000 | $0.58 | $1.740,00 |
IPN70R360P7SATMA1 Visão geral
A superjunction MOSFET (SJ MOSFET) is a power-MOSFET architecture that achieves very low on-state resistance per unit silicon area by alternating P- and N-doped epitaxial columns inside the drift region. CoolMOS™ P7 is Infineon's 700 V/800 V superjunction platform optimized for low-power switched-mode power supplies; within the broader taxonomy it sits as N-channel power MOSFET -> discrete semiconductor -> power semiconductor. The P7 family targets charger, adapter, LED-driver, and auxiliary-supply applications, and is engineered to deliver strong efficiency, fast switching, and high body-diode ruggedness at a competitive price point.
Key features of the IPN70R360P7SATMA1 include integrated ESD protection (HBM class 1C), very low Qrr and Qg for reduced switching loss, a low Vth (typ. 3.0 V at Vgs=10 V), and very tight Rds(on) distribution. The SOT-223 plastic package is footprint-compatible with DPAK pads in many layouts and provides a thermal pad that can be soldered to a copper pour for heat-sinking. Combined, these features enable slim, high-efficiency flyback, PFC, and buck topologies up to the 12.5 A continuous / 700 V envelope.
Technically, the part uses Infineon's charge-compensation principle: a deep-trench or multi-epi process creates lateral depletion regions that let the device sustain 700 V across a much thinner, lower-resistance drift layer than a conventional planar MOSFET. This yields the 360 mΩ Rds(on) at Vgs=10 V and at the same time keeps the figures of merit (FOMs = Rds(on) × Qg and Rds(on) × Qoss) low, which is essential for high-frequency SMPS designs. The internal body diode is designed for hard-commutation robustness in CCM PFC and active-clamp flyback stages.
Typical applications are low-power SMPS adapters and chargers, LED lighting drivers, auxiliary power supplies in white goods and industrial equipment, and PFC front stages. Designers choose it where 700 V breakdown, 12.5 A continuous current, and a small SMD footprint are needed at a competitive cost.
When designing with this device, pay attention to gate-drive voltage: the P7 platform is fully enhanced at Vgs=10 V, but 12 V is recommended for lowest Rds(on). The SOT-223 tab is the drain connection, so copper-area layout on the tab directly determines steady-state thermal performance and must be sized for the application's dissipation budget.
This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical SOT-223 layout/thermal design notes that go beyond the manufacturer datasheet.
Alternativas drop-in para IPN70R360P7SATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IPN70R360P7SATMA1 (mesmo formato e footprint) — diferindo em Operating Temperature Range, Package, Technology.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IPN70R450P7SATMA1
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IPN70R600P7SATMA1
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$0.49 / unidade
Ver ficha técnica →IPN70R360P7S-ATMA1
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IPN70R360P7SATMA1 Classificações máximas e características elétricas
| Drain-Source Voltage (Vdss) | 700 V |
| Drain Current Continuous (Id, Tc=25°C) | 12.5 A |
| On-State Resistance Rds(on) max (Vgs=10V) | 360 mΩ |
| Power Dissipation (Pd, Tc=25°C) | 7.2 W |
| Gate Threshold Voltage (Vth) typ | 3.0 V |
| Technology | CoolMOS P7 Superjunction (SJ) |
| Channel Type | N-Channel |
| Encapsulamento | PG-SOT223 (3-pin, 2+Tab) |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | -55°C to +150°C (junction) |
| Storage Temperature Range | -55°C to +150°C |
| ESD Protection (HBM) | Class 1C |
| Drain Tab Connection | Pin 3 (Tab) |
| RoHS / REACH | Compliant (per Infineon product page) |
Configuração de pinos do IPN70R360P7SATMA1
| Pino 1 | GATE — MOSFET gate drive input |
| Pino 2 | DRAIN — MOSFET drain (connected to tab via lead frame) |
| Pino 3 | SOURCE — MOSFET source |
| Pino TAB | DRAIN — Thermal / drain tab — must be soldered to copper pour for heatsinking |
Área de Operação Segura (DC, Tc=25°C, per Infineon P7 datasheet)
Aplicações típicas
IPN70R360P7SATMA1 é adequado para 6 aplicaçãos: Low-Power SMPS Flyback Adapter, LED Lighting Driver (Flyback / Buck), PFC Front Stage (CCM / DCM), Auxiliary Power Supply (White Goods), Industrial Auxiliary / Standby Converter, USB-PD / Quick-Charge Adapter.
Low-Power SMPS Flyback Adapter
The IPN70R360P7SATMA1 is a primary-side switch in 5-45 W universal-mains flyback adapters. The 700 V Vdss easily covers the 400 VDC rectified bus from 265 VAC mains with margin, while 360 mΩ Rds(on) at 12.5 A delivers conduction losses around 0.6 W at 1.5 A average primary current. The PG-SOT223 footprint allows slim single-sided PCB layouts typical of wall adapters, and the integrated HBM class 1C ESD protection prevents gate-oxide damage during automated assembly.
Recomendado
LED Lighting Driver (Flyback / Buck)
For isolated LED drivers in the 10-30 W range, the IPN70R360P7SATMA1 is well-matched. Its 700 V rating supports 277 VAC industrial mains, while the low Qrr body diode enables hard-commutated CCM operation in two-stage PFC + flyback designs. Compared to a DPAK alternative, the SOT-223 footprint reduces driver board height by ~30%, enabling slim LED downlights and T8/T5 tube retrofits with single-sided PCB routing.
Recomendado
PFC Front Stage (CCM / DCM)
As the boost-MOSFET in a 75-150 W PFC stage, the IPN70R360P7SATMA1 sustains 700 V reverse recovery events and 12.5 A continuous drain current with strong body-diode ruggedness. The CoolMOS P7 platform's low Qrr (single-digit nC) keeps reverse-recovery losses manageable at 65-100 kHz switching frequencies, supporting 92-95% PFC efficiency. Designers typically use a dedicated PFC controller such as the ICE3PCS03GXUMA1 to drive this MOSFET.
Recomendado
Auxiliary Power Supply (White Goods)
White-goods appliances need small standby aux supplies (3-10 W) drawing off the 300-400 VDC bus. The IPN70R360P7SATMA1 fits as the primary switch in a tiny flyback, with the SOT-223 footprint enabling direct soldering onto an inner PCB layer with adequate copper for thermal dissipation. Its ESD protection simplifies handling on automated production lines that lack strict ESD controls.
Recomendado
Industrial Auxiliary / Standby Converter
For 24-48 V industrial rail converters, the IPN70R360P7SATMA1 serves as the primary switch in a flyback running off a high-voltage bus, withstanding line transients up to 700 V. The SOT-223 footprint enables dense multi-rail PSU layouts where a DPAK or TO-220 footprint would not fit, and the 7.2 W power rating supports 8-15 W outputs with appropriate copper heatsinking.
Recomendado
USB-PD / Quick-Charge Adapter
The IPN70R360P7SATMA1 is well-suited as the primary switch in 18-45 W USB-PD and Quick-Charge adapters where PCB height is constrained to ~12 mm. The SOT-223 footprint keeps the mains-side switch height low, while the 360 mΩ Rds(on) keeps conduction loss to ~0.4 W at 1 A continuous primary current at full 45 W output. Pair it with a quasi-resonant or active-clamp flyback controller for highest efficiency.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IPN70R360P7SATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IPN70R450P7SATMA1 | IPN70R600P7SATMA1 | IPN70R360P7S-ATMA1 | STW20N95K3 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics |
| Package | PG-SOT223 | PG-SOT223 | PG-SOT223 | PG-SOT223 | TO-247 |
| Drain-Source Voltage Vdss | 700 V | 700 V | 700 V | 700 V | 950 V |
| Rds(on) max (Vgs=10V) | 360 mΩ | 450 mΩ | 600 mΩ | 360 mΩ | 270 mΩ |
| Technology | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | CoolMOS P7 Superjunction | MDmesh K3 Superjunction |
Principais diferenciais
- SOT-223 slim-profile package with DPAK-compatible thermal path (vs IPA60R190C6 (TO-220 FullPAK))
- P7 superjunction technology with HBM class 1C ESD protection (vs Older CoolMOS C6 platform)
- Cost-optimized 360 mΩ variant for low-power mains converters (vs IPN70R450P7S (450 mΩ))
Notas de projeto
Estimated: With 360 mΩ Rds(on) and 1.5 A average primary current in a flyback at 45 W output, conduction loss is roughly Pcond ≈ I² × R × D = 1.5² × 0.36 × 0.5 ≈ 0.4 W. The PG-SOT223 thermal resistance (θJA) on a 1 sq-inch 1 oz copper pad is ~62°C/W per Infineon's SOT-223 application notes, yielding a junction temperature rise of ~25°C above ambient. Always size the drain tab copper pour to keep Tj below 125°C at maximum expected ambient; for a sealed 60°C enclosure, increase the pad to ~2 sq inches to stay within derating limits.
The SOT-223 drain tab must be soldered to a continuous copper pour on the same PCB layer as the drain lead, ideally with thermal vias to an internal plane. Keep the gate-source loop area minimal (under 5 mm²) to avoid parasitic inductance that can over-shoot Vgs during switching events. Place the gate-drive resistor (typ. 10-47 Ω) as close to pin 1 as possible.
When routing from the rectified mains DC bus to the drain, keep high-dv/dt traces short and away from sensitive analog feedback. Place the IC's gate drive return path (source sense) directly under the device to minimize common-source inductance, which otherwise degrades switching speed and can cause spurious dv/dt-triggered turn-on of the body diode. Refer to Infineon's CoolMOS P7 application note for recommended gate-drive PCB patterns.
Do not drive the gate below 9 V — the CoolMOS P7 is fully enhanced at Vgs=10 V and 12 V is recommended for lowest Rds(on). Ensure the source-current-sense resistor (if used) is in series with the source pin, not the drain tab, otherwise current sensing will be inaccurate. Finally, verify that the application's avalanche energy during turn-off stays within the datasheet's EAS rating for inductive switching events.
Informações de conformidade
RoHS and REACH compliance per Infineon product page. Industrial-grade (not AEC-Q100); consumer/commercial/industrial qualified only.
