IRFH5020TRPBF - 200V 5.1A N-Channel HEXFET MOSFET | Infineon
N.º da peça: IRFH5020TRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.92 | $0,92 |
| 10 | $0.78 | $7,80 |
| 100 | $0.62 | $62,00 |
| 500 | $0.51 | $255,00 |
| 1.000 | $0.43 | $430,00 |
| 4.000 | $0.36 | $1.440,00 |
IRFH5020TRPBF Visão geral
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to switch or amplify electronic signals in power-conversion circuits. The IRFH5020 belongs to the N-channel enhancement-mode MOSFET category within the broader power-semiconductor hierarchy, and it sits inside the HEXFET process family that uses a hex-cell vertical DMOS structure to minimize conduction loss. In a typical system architecture, this part is used after an upstream DC-DC controller and before the load, where it acts as a synchronous-rectifier or switching element.
Key features include: low RDS(on) for reduced conduction losses; low thermal resistance to PCB (0.8°C/W) enabling compact PCB layouts; 100% Rg tested; an industry-standard SuperSO8 pinout compatible with existing surface-mount techniques; JEDEC-standard product qualification at the normal level; and gate-drive optimization for 10V VGS. The SuperSO8 5x6 mm PQFN footprint matches the industry-standard layout pattern, allowing drop-in placement alongside competitor parts.
From a technical-design standpoint, the IRFH5020 employs Infineon's IR MOSFET trench technology, which combines a vertical cell structure with optimized gate-oxide thickness to balance switching speed and ruggedness. Its low gate charge (Qg ≈ 11 nC per Mouser datasheet entry) keeps driver losses low in high-frequency synchronous-rectifier loops, while the 200V VDS rating provides ample headroom for 120V offline-derived rails and 48V telecom buses.
Typical applications include secondary-side synchronous rectification in isolated DC-DC converters, DC-motor inverters, DC-DC brick modules, and boost converters. The wide VDS margin and low RDS(on) make it especially attractive for 48V telecom point-of-load stages and industrial motor-drive half-bridges. The automotive-grade version, IRFH5020TRPBF's sister part IRFHS8241TRPBF (PQFN-8 family), shares the same 5x6 mm land pattern.
When designing with this device, ensure the PCB copper-pour area beneath the exposed pad is maximized to take advantage of the 0.8°C/W junction-to-board thermal resistance; this is the single largest contributor to keeping junction temperature low in surface-mount MOSFETs. Designers should also observe the 100% Rg-tested gating requirement - this guarantees matched gate resistances for paralleled-device use, simplifying high-current designs.
Alternativas drop-in para IRFH5020TRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRFH5020TRPBF (mesmo formato e footprint) — diferindo em Technology, Operating Temperature Range, Package, FET Type, MSL Level.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRFHS8241TRPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSC0901NSATMA1
✅ Drop-In✓ Em estoque
$0.78 / unidade
Ver ficha técnica →BSC014N04LSATMA1
✅ Drop-In✓ Em estoque
$0.74 / unidade
Ver ficha técnica →IRFH7084TRPBF
✅ Drop-In✓ Em estoque
$0.45 / unidade
Ver ficha técnica →IRFH8201TRPBF
✅ Drop-In✓ Em estoque
$1.05 / unidade
Ver ficha técnica →NTMFS5C604NLT1G
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFH5020TRPBF Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Product Family | HEXFET Power MOSFET |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Configuration | Single with built-in diode |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TA=25°C | 5.1 A |
| Pulsed Drain Current (IDM) | 63 A |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| RDS(on) max at VGS=10V | 55 mΩ |
| Gate Charge (Qg) typ | 11 nC |
| Power Dissipation (TA=25°C) | 3.6 W |
| Dissipação de potência (TC=25°C) | 8.3 W |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 °C/W |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 |
| Tipo de montagem | Surface Mount |
| Profile Height | ≤ 0.9 mm |
| Faixa de temperatura de operação | -55 °C to +150 °C (TJ max) |
| Qualification Standard | JEDEC (Normal level) |
| Gate Drive Optimization | 10 V VGS |
| RoHS Compliance | Compliant (Pb-free suffix PBF) |
| Nível MSL | 1 (per industry standard for PQFN-8) |
Configuração de pinos do IRFH5020TRPBF
| Pino 1 | Gate — Gate drive input (10V optimized, 100% Rg tested) |
| Pino 2 | Source — Source terminal (connected to thermal pad) |
| Pino 3 | Source — Source terminal (connected to thermal pad) |
| Pino 4 | Source — Source terminal (connected to thermal pad) |
| Pino 5 | Source — Source terminal (connected to thermal pad) |
| Pino 6 | Source — Source terminal (connected to thermal pad) |
| Pino 7 | Source — Source terminal (connected to thermal pad) |
| Pino 8 | Drain — Drain terminal |
Área de Operação Segura (DC)
Aplicações típicas
IRFH5020TRPBF é adequado para 7 aplicaçãos: Secondary-Side Synchronous Rectification, DC-DC Brick Modules, Boost Converters, DC Motor Inverters, Industrial Switch-Mode Power Supplies, Hot-Swap and Load Switch Controllers, Solar Inverter Auxiliary Stages.
Secondary-Side Synchronous Rectification
The IRFH5020TRPBF fits secondary-side synchronous rectification in isolated DC-DC converters because its 55 mΩ RDS(on) at VGS=10V directly minimizes conduction loss in the rectifier leg, while the 11 nC total gate charge keeps driver loss low at switching frequencies above 200 kHz. Placed in the low-side rectifier position of a forward or half-bridge converter with a 48V input and 12V/5V output, it replaces lossy Schottky diodes to gain 2-4% efficiency. The 200V VDS rating provides 4x headroom over a 48V bus, and the 0.8°C/W RthJB through the exposed pad enables high-density layouts. Its compatibility with industry-standard 10V gate drive simplifies interface with most PWM controllers.
Recomendado
DC-DC Brick Modules
The IRFH5020TRPBF is well-suited for brick-module DC-DC converters in telecom and industrial systems where 48V nominal input is regulated to lower voltages. Its 200V VDS comfortably exceeds 48V plus transient overshoot, while 55 mΩ RDS(on) supports continuous drain currents up to 5.1A at TA=25°C - sufficient for sub-100W brick modules. The PQFN-8 5x6 mm SuperSO8 package with 0.8°C/W RthJB allows high-density layouts, and the industry-standard pinout permits reuse of existing PCB footprints across voltage variants. The 100% Rg-tested gate simplifies paralleling if higher currents are needed.
Recomendado
Boost Converters
The IRFH5020TRPBF fits boost-converter designs that step up a battery or bus voltage to a higher rail, such as 12V-to-24V or 24V-to-48V boost stages for industrial sensor excitation. With a 200V VDS rating, the device tolerates the boost-converter output voltage plus inductive overshoot, providing robust margin in 48V-telecom and industrial-PLC systems. The 55 mΩ RDS(on) keeps conduction loss manageable at currents of several amps, and the 11 nC gate charge supports switching frequencies of 100-300 kHz without excessive driver loss. The PQFN-8 5x6 mm footprint simplifies PCB layout in tight industrial enclosures.
Recomendado
DC Motor Inverters
The IRFH5020TRPBF can serve as the switching element in low-power DC-motor inverter half-bridges for industrial automation and robotics. Its 200V VDS accommodates motor back-EMF in 48V or 96V motor systems, while 5.1A continuous drain current handles fractional-horsepower motor loads. The PQFN-8 5x6 mm footprint with 0.8°C/W RthJB keeps junction temperature low under repetitive switching, and the SuperSO8 pinout permits direct replacement with paralleled parts for higher-current servo drives. Its ±20V VGS rating and 100% Rg-tested gate ensure robust operation in noisy industrial environments.
Recomendado
Industrial Switch-Mode Power Supplies
The IRFH5020TRPBF is well-suited for switch-mode power supplies (SMPS) in industrial equipment requiring 48V-120V input ranges. Its 200V VDS provides ample margin above 120V offline-derived rails, and the 55 mΩ RDS(on) keeps full-load efficiency high at continuous currents up to 5.1A. The PQFN-8 5x6 mm SuperSO8 package with industry-standard pinout allows drop-in placement on existing 48V-input SMPS designs, and the JEDEC qualification assures industrial temperature-range operation. The exposed thermal pad with 0.8°C/W RthJB simplifies heatsinking in compact industrial enclosures.
Recomendado
Hot-Swap and Load Switch Controllers
The IRFH5020TRPBF works as the switching element in hot-swap and electronic-circuit-breaker circuits that protect downstream loads from inrush and fault currents. Its 200V VDS handles transient back-EMF when switching inductive loads, while the 5.1A continuous rating supports moderate-power load switches. The 11 nC gate charge enables fast turn-off for fault-current interruption in microseconds, and the 100% Rg-tested gate simplifies multi-MOSFET paralleling for higher-current applications. The PQFN-8 5x6 mm SuperSO8 footprint permits direct layout reuse with industry-standard load-switch ICs.
Recomendado
Solar Inverter Auxiliary Stages
The IRFH5020TRPBF fits auxiliary switching stages in solar micro-inverters and string inverters, including low-side switches in MPPT boost converters and auxiliary power rails. Its 200V VDS comfortably exceeds typical 40-60V solar-panel open-circuit voltages plus inductive overshoot, and its 55 mΩ RDS(on) keeps conduction loss manageable at 5.1A continuous. The SuperSO8 5x6 mm PQFN package with 0.8°C/W RthJB and ≤ 0.9 mm profile enables compact inverter layouts where every millimeter of board height matters. Its JEDEC-normal qualification supports long-life solar installations.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRFH5020TRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRFHS8241TRPBF | BSC0901NSATMA1 | NTMFS5C604NLT1G |
|---|---|---|---|---|
| Package | 8-PQFN (5x6 mm) SuperSO8 | 8-PQFN (5x6 mm) SuperSO8 - same | 8-PQFN (5x6 mm) SuperSO8 - same | 8-PQFN (5x6 mm) SuperSO8 - same |
| Brand | Infineon | Infineon | Infineon | onsemi |
| VDS (Drain-to-Source Voltage) | 200 V | 250 V | 75 V | 200 V |
| Continuous Drain Current (TA=25°C) | 5.1 A | 5.2 A | 100 A | 7.3 A |
Principais diferenciais
- Industry-leading low thermal resistance to PCB (0.8°C/W) (vs BSC0901NSATMA1 (1.0°C/W))
- Higher VDS rating than same-package competition (vs NTMFS5C604NLT1G (200V matched))
- 100% Rg tested for matched gate resistance (vs Industry standard PQFN-8 5x6 mm competitors)
Notas de projeto
Estimated: The IRFH5020TRPBF has a junction-to-PCB thermal resistance of 0.8°C/W when the exposed thermal pad is soldered to a properly sized copper pour. At full 5.1A continuous drain current with RDS(on)=55mΩ and VIN=12V→VOUT=3.3V (synchronous rectifier), conduction loss ≈ 1.43W. Junction temperature rise above 25°C ambient is therefore ~1.43W × 0.8°C/W = 1.14°C, well within TJmax=150°C. Designers should maximize the copper area beneath the exposed pad to take full advantage of the 0.8°C/W rating.
The PQFN-8 5x6 mm SuperSO8 package relies entirely on the exposed thermal pad for heatsinking. Use at least 1 square inch of continuous copper plane on the top layer directly beneath the part, stitched with multiple vias to inner-layer copper. Place the gate-drive resistor as close to the Gate pin (pin 1) as possible to minimize parasitic inductance; gate-loop inductance above 5 nH can cause unwanted ringing and gate-oxide stress.
Do not exceed VGS=±20V. The IRFH5020 is optimized for 10V gate drive; driving it at 4.5V VGS raises RDS(on) significantly and causes excessive conduction loss. Do not parallel parts without verifying matched gate resistance - the 100% Rg-tested specification ensures matched parts but does not substitute for symmetric PCB layout. Always add a gate-source pull-down resistor (10-100 kΩ) to keep the MOSFET off during controller power-up.
Keep the high-current drain loop (drain-to-source-to-ground-to-input-cap) as small as physically possible to minimize parasitic inductance. The exposed pad should connect to a star-ground point. For switching frequencies above 200 kHz, add a small RC snubber (10Ω + 1nF) across drain-source if ringing exceeds 20% of VDS. Reference Infineon's SuperSO8 application note for layout guidance specific to the PQFN-8 5x6 mm footprint.
Informações de conformidade
RoHS compliant per PBF suffix. JEDEC-normal qualification. AEC-Q100 automotive qualification not available for this specific part number - refer to automotive-grade sister parts if required.
