BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
MPN: BSC0901NSATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 5,000 | $0.78 | $3,900.00 |
Drop-in alternatives for BSC0901NSATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSC0901NS
β Drop-Inπ Reference alternative (not in catalog)
BSC0901NSXT
β Drop-Inπ Reference alternative (not in catalog)
BSC0902NSIATMA1
β Drop-Inβ In Stock
$0.32 / Unit
View Datasheet βBSC022N04LS6ATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.66 / Unit
View Datasheet βBSC014N04LSIATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.39 / Unit
View Datasheet βTPHR8504PL
β Drop-Inπ Reference alternative (not in catalog)
NTMFS4834N
β Drop-Inπ Reference alternative (not in catalog)
BSC0901NSATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 30V |
| Technology | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| Continuous Drain Current (ID) at Ta | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm |
| Avalanche Energy (EAS) | 80 mJ |
| Power Dissipation (PD) at Tc | 69 W |
| Power Dissipation (PD) at Ta | 2.5 W |
| Operating Temperature Range | -55C to +150C |
| Package | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 |
| Built-in Body Diode | Yes |
| RoHS Status | Compliant |
| Configuration | Single N-Channel with Built-in Diode |
BSC0901NSATMA1 Pin Configuration
| Pin 1 | G β Gate - gate drive input (drive to 10V for full enhancement) |
| Pin 2 | S β Source (Kelvin source connection recommended for gate driver return) |
| Pin 3 | S β Source (parallel with pin 2 and exposed pad) |
| Pin 4 | S β Source (parallel with pin 2 and exposed pad) |
| Pin 5 | D β Drain (parallel with all drain pins and exposed pad) |
| Pin 6 | D β Drain (parallel with all drain pins and exposed pad) |
| Pin 7 | S β Source (sometimes used as secondary source / Kelvin sense) |
| Pin 8 | D β Drain (parallel with all drain pins and exposed pad) |
| Pin EP | D β Exposed Pad - Drain connection, also serves as thermal pad (must be soldered to PCB copper pour) |
Safe Operating Area (DC)
Typical Applications
BSC0901NSATMA1 is suitable for 7 applications: Server & Datacom Voltage Regulators, Synchronous Buck DC-DC Converters, Hot-Swap & ORing Circuits, Motor Drive & Power Tools, Battery Protection & Load Switch, Point-of-Load (POL) Converters, Telecom Brick & Intermediate Bus Converters.
Server & Datacom Voltage Regulators
The BSC0901NSATMA1 is designed primarily for voltage regulator solutions in servers, datacom and telecom power architectures. Its 30V VDS rating comfortably covers 12V intermediate bus designs with ample headroom for transient spikes, while the 1.9 mOhm maximum RDS(on) keeps conduction losses low in continuous high-current paths. In a typical 12V-to-1V synchronous buck stage delivering 40A, the low-side switch dissipates roughly P = I^2 x R = 40^2 x 0.0019 = 3.0W, easily handled by the TDSON-8-5 package on a properly designed copper pour. The OptiMOS trench technology provides fast switching and low Qg, supporting high-frequency operation (>500 kHz) that reduces the size of output inductors and capacitors. This makes the BSC0901NSATMA1 a strong fit for multi-phase VRs in server motherboards and 48V-to-12V intermediate bus converters where efficiency above 95% is mandatory.
Recommended
Synchronous Buck DC-DC Converters
The BSC0901NSATMA1 excels as both high-side and low-side switch in synchronous buck DC-DC converters for 12V input rails. Its low gate charge and ultra-low RDS(on) yield an excellent FOM (RDS(on) x Qg) that directly improves light-load and full-load efficiency. In a 12V-to-3.3V buck stage at 30A, the low-side BSC0901NSATMA1 dissipates approximately 1.7W (I^2 x R), well within the 2.5W Ta rating when mounted on a 1 sq inch copper pour. The exposed-pad TDSON-8-5 package provides low thermal resistance (~50 C/W on standard 1 oz copper), enabling fanless operation at moderate power levels. Designers should drive the gate at 10V for full enhancement and use a dedicated gate-driver IC within 5 mm of the gate pad to minimize parasitic loop inductance and switching ringing.
Recommended
Hot-Swap & ORing Circuits
Hot-swap and ORing applications in 12V distributed power systems benefit from the BSC0901NSATMA1's 30V rating, 100A continuous current capability, and 80 mJ avalanche energy rating (EAS). In a typical 12V ORing circuit, two BSC0901NSATMA1 MOSFETs back-to-back provide reverse-current blocking with low forward drop (50mV at 25A per device), minimizing dissipation compared to Schottky diodes. The avalanche rating provides robustness against transient voltage spikes during hot-plug events when the device must absorb the energy of an inrush surge. The 1.9 mOhm RDS(on) keeps conduction loss low during steady-state load sharing between redundant supplies.
Recommended
Motor Drive & Power Tools
In 12V to 24V brushless DC (BLDC) motor drives and cordless power tool applications, the BSC0901NSATMA1 serves as the low-side FET in three-phase bridge configurations. The 100A continuous Tc current rating supports the high peak currents typical during motor startup and stall conditions, while the 30V VDS rating accommodates inductive flyback transients when paired with proper gate-driver protection. The OptiMOS trench technology provides fast switching and low reverse-recovery charge, reducing switching losses in PWM-driven motor control loops at 20-50 kHz. The compact 5x6 mm footprint enables high-power-density motor driver boards, important for handheld power tools where size and weight are critical design constraints.
Recommended
Battery Protection & Load Switch
In lithium-ion battery packs and portable equipment, the BSC0901NSATMA1 functions as a low-resistance load switch and reverse-polarity protection device. Its 1.9 mOhm RDS(on) contributes minimal voltage drop in series with the load, preserving battery runtime; for example, at 20A continuous load the drop is only 38 mV. The 30V VDS rating safely exceeds the maximum battery voltage of multi-cell packs (up to 12.6V for 3S Li-ion) plus inductive transients from motors or downstream converters. The MSL-1 rating simplifies PCB assembly, and the exposed-pad package efficiently removes heat to the system chassis or copper pour. The internal body diode can also be used as a freewheeling path in low-side switching topologies.
Recommended
Point-of-Load (POL) Converters
Point-of-Load converters that step down from a 12V intermediate bus to sub-1V CPU/GPU core voltages benefit from the BSC0901NSATMA1's combination of low RDS(on), low Qg, and small footprint. In multi-phase POL topologies running at 500 kHz to 1 MHz, the OptiMOS device minimizes both conduction loss (from low RDS(on)) and switching loss (from low Qg), enabling efficiencies above 92% even at light loads. The 100A Tc rating allows a single BSC0901NSATMA1 to carry the full load current in single-phase designs up to 50A. The exposed-pad TDSON-8-5 package supports direct heatsinking to top-side copper pours, important for POL modules mounted near hot processors where ambient temperatures can exceed 70C.
Recommended
Telecom Brick & Intermediate Bus Converters
In 24V to 48V telecom brick converters and intermediate bus architectures (IBA), the BSC0901NSATMA1 can serve in secondary-side synchronous rectification stages following a primary-side isolation transformer. While its 30V VDS rating limits primary-side use, it is well suited for post-regulation stages stepping down 12V to logic-level rails. The 100A Tc current and 1.9 mOhm RDS(on) make it appropriate for high-current secondary rectification where conduction loss dominates, supporting overall converter efficiencies of 96% or higher in 48V-input brick designs. The fast body diode recovery minimizes dead-time losses, critical at switching frequencies above 200 kHz commonly used in telecom bricks.
Recommended
Recommended Products Summary
Engineering reference data for BSC0901NSATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0901NS | BSC0901NSXT | BSC0902NSIATMA1 | TPHR8504PL | NTMFS4834N |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Toshiba | onsemi |
| Package | SuperSO8 / TDSON-8-5 (5x6 mm) | SuperSO8 / TDSON-8-5 (5x6 mm) - same | SuperSO8 / TDSON-8-5 (5x6 mm) - same | SuperSO8 / TDSON-8-5 (5x6 mm) - same | SOP-Advance (5x6 mm class) - same footprint | SO-8FL (5x6 mm class) - same footprint |
| Drain-to-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 100 A | 100 A | 100 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) Max at VGS=10V | 1.9 mOhm | 1.9 mOhm | 1.9 mOhm | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD) at Tc | 69 W | 69 W | 69 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Avalanche Energy (EAS) | 80 mJ | 80 mJ | 80 mJ | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Grade (AEC-Q101) | No (standard grade) | No | Yes (AEC-Q101) | Yes (AEC-Q101) | No | No |
| Technology | OptiMOS 30V Trench | OptiMOS 30V Trench | OptiMOS 30V Trench | OptiMOS | Toshiba U-MOS | onsemi N-channel Trench |
Key Differentiators
- Ultra-low 1.9 mOhm maximum RDS(on) in 5x6 mm footprint (vs BSC0902NSIATMA1 (slightly higher RDS(on)))
- 100A continuous drain current at case temperature (vs TPHR8504PL (Toshiba equivalent))
- OptiMOS 30V trench technology with optimized body diode (vs NTMFS4834N (onsemi equivalent))
Design Notes
Estimated: at ID = 50A continuous in a synchronous buck low-side position with RDS(on) = 1.9 mOhm, conduction dissipation is P = I^2 x R = 50^2 x 0.0019 = 4.75W. The TDSON-8-5 exposed-pad package requires at least 1 square inch of 2 oz copper pour (or equivalent thermal via array) to keep junction-to-ambient thermal resistance around 50 C/W. Without adequate copper, junction temperature can rise to the 150C maximum under sustained load. For continuous operation above 30A, consider spreading the copper pour across multiple inner PCB layers stitched with thermal vias directly under the exposed pad.
Use a Kelvin-source connection by routing the gate-driver return directly to pin 2 (or pin 7) rather than sharing the power source path. This eliminates source-inductance-induced gate voltage bounce that otherwise slows switching and increases ringing. Place input capacitors (high-frequency ceramic, 100nF X7R) within 2 mm of the drain pins, and place the gate-driver IC within 5 mm of the gate pad to minimize gate-loop inductance. The exposed drain pad must be soldered to a continuous copper pour on the top layer and connected through a via array to inner ground/power planes for thermal spreading.
Do not drive the gate with logic-level voltages (3.3V or 5V) - the BSC0901NSATMA1 requires at least 10V VGS for full enhancement into the 1.9 mOhm RDS(on) region; with 4.5V VGS the on-resistance is several times higher. Do not exceed 30V VDS, including transient spikes from inductive loads. Add a TVS diode or RC snubber if switching inductive loads directly. Do not operate above the 150C maximum junction temperature - derate by 30-50% in continuous high-current designs for reliability margin.
When switching at frequencies above 500 kHz in a synchronous buck converter, gate-loop and power-loop inductance both become critical. The gate-loop inductance (gate-driver output to gate pin back to source pin) should be kept below 5 nH to avoid excessive ringing and false triggering. Use a gate-drive resistor of 10-22 ohm to damp ringing, and consider adding a small ferrite bead or gate-source 10kohm pull-down to ensure the MOSFET stays off during controller startup. The body diode reverse-recovery behavior of the OptiMOS device is already optimized, but at very high di/dt a small RC snubber (10 ohm + 1 nF) across the drain-source can further reduce voltage overshoot.
Compliance Information
RoHS compliant per Infineon product page; AEC-Q101 (automotive equivalent) applies to the BSC0901NSXT variant, not the standard BSC0901NSATMA1. MSL-1 rating per the Vyrian distributor listing.
