K3KL3L30DM-BGCU - LPDDR5X 64Gb 8533Mbps DRAM | Samsung
N.º da peça: K3KL3L30DM-BGCU ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $78.75 | $78,75 |
| 10 | $56.875 | $568,75 |
| 100 | $50.3125 | $5.031,25 |
| 500 | $48.125 | $24.062,50 |
| 1.000 | $45.9375 | $45.937,50 |
K3KL3L30DM-BGCU Visão geral
LPDDR (Low Power Double Data Rate) SDRAM is a type of synchronous dynamic random-access memory optimized for mobile and power-sensitive systems. Within the memory hierarchy, LPDDR5X sits at the top of the JEDEC low-power DRAM family (LPDDR4 -> LPDDR5 -> LPDDR5X), functioning as the main-system memory IC that feeds CPUs, GPUs and NPUs in smartphones, tablets, automotive computing platforms and AI edge devices.
Key features of the K3KL3L30DM-BGCU include its 8533 Mbps pin speed, which places it in the highest LPDDR5X speed bin, and its 64 Gb density per device, enabling multi-gigabyte system memory with only a few ICs. The x64 organization and 496-ball FBGA footprint allow dense PCB routing on mobile-style boards.
Technically, LPDDR5X extends LPDDR5 with higher signaling rates and improved power efficiency. Samsung states its LPDDR5X family delivers up to 8.5 Gbps data processing speeds with approximately 20% better power efficiency than LPDDR5, making it suited to AI inference, high-resolution imaging pipelines and 5G data throughput.
Typical applications include flagship smartphone main memory, automotive infotainment and ADAS compute modules, AI edge accelerators, and premium tablet and laptop DRAM subsystems paired with Qualcomm or MediaTek application processors.
A key design consideration is power-integrity: LPDDR5X at 8533 Mbps demands tight rail regulation on the 0.5 V VDDQ domain, careful fly-by trace length matching and per-rail decoupling per the memory controller vendor layout guide.
This page consolidates distributor stock signals, family cross-references and practical sourcing notes beyond the bare datasheet listing. Pricing is RFQ-based as of 2026-09-04 because this EOL-status part trades through broker channels rather than fixed catalog tiers.
Alternativas drop-in para K3KL3L30DM-BGCU — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K3KL3L30DM-BGCU (mesmo formato e footprint) — diferindo em Memory Type, Density, Interface, Package, Power Efficiency.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K3KL3L30CM-BGCU
✓ Em estoque
Consulte o preço
Ver ficha técnica →K3KLALA0DM-JGCT
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Ver ficha técnica →K3KL9L90DM-JGCT
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$65.18 / unidade
Ver ficha técnica →K3KL8L80DM-MGCU
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Ver ficha técnica →K3KL2L20DM-JGCT
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$20.8 / unidade
Ver ficha técnica →K3KL1L10GM-JGCT
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$30.9 / unidade
Ver ficha técnica →K3KL3L30DM-BGCU Classificações máximas e características elétricas
| Tipo de memória | LPDDR5X DRAM |
| Density | 64 Gb |
| Organização da memória | x64 |
| Taxa de dados | 8533 Mbps |
| Supply Voltage (VDD1) | 1.8 V |
| Supply Voltage (VDD2) | 1.05 V |
| Supply Voltage (VDDQ) | 0.5 V |
| Core Voltage Rail | 0.9 V |
| Temperatura de operação | -25 C to +85 C |
| Encapsulamento | 496-ball FBGA |
| Tipo de montagem | Surface Mount |
| Interface | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | EOL |
| Marca | Samsung Semiconductor |
| Application Segment | Mobile, consumer electronics, embedded systems |
Guia de Configuração de Pinos do K3KL3L30DM-BGCU 496-ball fbga
Configuração de pinos para K3KL3L30DM-BGCU (pacote 496-ball fbga). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para K3KL3L30DM-BGCU.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
K3KL3L30DM-BGCU é adequado para 6 aplicaçãos: Flagship Smartphone Main Memory, Automotive Infotainment and Cockpit Computing, AI Edge Accelerator Memory, Premium Tablets and Laptops, 5G Infrastructure and Networking Equipment, High-Resolution Camera and Imaging Systems.
Flagship Smartphone Main Memory
The K3KL3L30DM-BGCU is designed as main system memory for flagship smartphones, where its 8533 Mbps pin speed matches the LPDDR5X memory controllers of Qualcomm Snapdragon and MediaTek Dimensity application processors. A single 64 Gb (8 GB) IC allows an 8 GB or 16 GB system configuration with only one or two devices, saving board area on densely packed mobile PCBs. Its x64 organization maximizes bus width per package, and LPDDR5X power management (deep sleep modes, per-bank refresh) preserves battery life during standby. Because 0.5 V VDDQ signaling dominates power integrity at 8.5 Gbps, designers must follow the application processor vendor's fly-by routing and ODT tuning guidelines. Samsung states the LPDDR5X family delivers about 20% better power efficiency than LPDDR5, directly extending screen-on time in AI-heavy workloads.
Recomendado
Automotive Infotainment and Cockpit Computing
Samsung promotes its LPDDR5X family for IT and automotive devices, and cockpit domain controllers increasingly demand LPDDR5X bandwidth for multi-display clusters, 3D navigation and in-cabin AI. The K3KL3L30DM-BGCU's 8533 Mbps rate supplies the memory bandwidth needed by high-resolution GPU rendering pipelines, while its -25 C to +85 C operating range covers passenger-compartment electronics. Designers should note that this range does not meet AEC-Q100 Grade 1, so the part suits infotainment rather than powertrain or zone-controller roles. In these systems the DRAM typically pairs with automotive SoCs supporting LPDDR5X, with the PMIC providing the four-rail 1.8 V / 1.05 V / 0.9 V / 0.5 V sequencing. EOL status means automotive programs should secure last-time-buy quantities or qualify an active family variant early in the program.
Recomendado
AI Edge Accelerator Memory
Edge AI inference - from large-language-model assistants on-device to real-time video analytics - is memory-bandwidth bound, making LPDDR5X an attractive main memory choice. The K3KL3L30DM-BGCU provides 64 Gb per device at 8533 Mbps; four devices on a x64-serialized bus deliver 32 GB of capacity with multi-hundred-GB/s aggregate bandwidth for model weight streaming. Samsung's 20% power-efficiency gain over LPDDR5 translates into lower SoC thermal budgets in fanless edge boxes. The four-rail supply (1.8 V, 1.05 V, 0.9 V, 0.5 V) typically comes from a dedicated PMIC with dynamic voltage-frequency scaling tied to the AI workload. Designers must budget for high simultaneous-switching noise on VDDQ at 8.5 Gbps and follow the controller vendor's equalization training procedures during bring-up.
Recomendado
Premium Tablets and Laptops
Premium tablets and thin-and-light laptops use LPDDR5X as soldered-down main memory to save board space, reduce height and cut power versus DDR5 SODIMM designs. The K3KL3L30DM-BGCU's 64 Gb density allows 8 GB or 16 GB configurations with minimal package count, and its 8533 Mbps rate supports the memory bandwidth demanded by high-refresh displays and content-creation workloads. Samsung highlights LPDDR5X capacity up to 64 GB per system-level configuration for IT devices, which this IC family enables. Thermal design is simpler than discrete-memory PCs because the FBGA dissipates heat into the board, but PCB stack-up must control impedance for the 0.5 V VDDQ signaling. EOL status makes this part relevant mainly for service inventory and repair of existing designs.
Recomendado
5G Infrastructure and Networking Equipment
5G baseband units, small-cell routers and network appliances benefit from LPDDR5X bandwidth for packet processing, and Samsung's LPDDR5X platform targets high-throughput communication systems alongside mobile. The K3KL3L30DM-BGCU's 8533 Mbps rate feeds line-card CPUs and network processors handling multi-gigabit streams, while the 64 Gb density supports large buffer and table memory footprints. At -25 C to +85 C, the part suits outdoor-enclosure telecom equipment, though designers should derate for sustained ambient loads. Power architecture in these systems typically pairs the DRAM with a dedicated PMIC supporting LPDDR5X DVFS rails. As the part is EOL, networking OEMs should treat it as a maintenance-stock item and qualify active Samsung LPDDR5X alternatives for new platform builds.
Recomendado
High-Resolution Camera and Imaging Systems
Computational photography and industrial machine-vision systems generate burst data volumes that stress memory bandwidth: an 8K image pipeline at high frame rates requires hundreds of GB/s of sustained DRAM throughput. The K3KL3L30DM-BGCU, with 8533 Mbps pin speed and 64 Gb capacity, provides the frame-buffer headroom such pipelines need when paired with image signal processors supporting LPDDR5X. Samsung's stated 20% power-efficiency improvement over LPDDR5 helps battery-powered camera platforms extend recording time. The four-rail supply must be sequenced per the ISP vendor's power-up table, and VDDQ decoupling must handle burst write currents during high-frame-rate capture. Given EOL status, camera OEMs should hold last-time-buy stock for service or migrate to an active family variant with identical ball map.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K3KL3L30DM-BGCU — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K3KL3L30CM-BGCU | K3KLALA0DM-JGCT | K3KL8L80DM-MGCU |
|---|---|---|---|---|
| Package | 496-ball FBGA | 496-ball FBGA (CM variant) - same family | 496-ball FBGA (DM family) | 496-ball FBGA (DM family) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Organization | x64 | x64 | x64 (LPDDR5X family) | x64 (LPDDR5X family) |
Principais diferenciais
- Flagship 8533 Mbps speed bin (vs K3KL2L20DM-JGCT)
- 64 Gb single-package density (vs K3KL2L20DM-JGCT)
- Same family package reuse (vs K3KL8L80DM-MGCU)
Notas de projeto
The K3KL3L30DM-BGCU requires four supply rails: 1.8 V (VDD1), 1.05 V (VDD2), 0.9 V (core) and 0.5 V (VDDQ). At 8533 Mbps the VDDQ rail sees the largest di/dt transients; use a PMIC with LPDDR5X-specific rails and DVFS support, and verify rail sequencing against the host application processor power-up table before first power-on. Estimated: transient current on VDDQ scales with the number of simultaneously switching DQ pins, so budget decoupling per the controller vendor's reference design rather than per-device rules of thumb.
LPDDR5X at 8.5 Gbps demands tight length matching on address/command fly-by routing and per-byte DQ/DQS length control within the tolerance defined by the memory controller layout guide. Keep the DRAM within the controller's specified trace-length budget, maintain single-ended impedance targets for the 0.5 V VDDQ domain, and place the 496-ball FBGA so that VDDQ ball-field decoupling vias reach the power plane directly. Follow Samsung's package land-pattern outline exactly for the DM package code.
Because the K3KL3L30DM-BGCU is EOL, second-source brokers are the main supply path - insist on date-code and packaging evidence, and screen for remarked parts, which are a known counterfeit risk in EOL mobile DRAM. Also, the package suffix matters: DM and CM codes denote different Samsung FBGA variants, and GM/JGCT/MGCU suffixes carry additional grade differences. Never treat a family member as drop-in without confirming the ball map and density tables in firmware.
Informações de conformidade
Compliance data not present in provided web data. Operating range -25 C to +85 C indicates consumer/IT grade; no AEC-Q100 qualification documented for this MPN.
