K3KL3L30CM-BGCU - 64Gb LPDDR5X DRAM 8533Mbps | Samsung
MPN: K3KL3L30CM-BGCU ✓ Active| Qty | Unit Price | Extended |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
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Drop-in alternatives for K3KL3L30CM-BGCU — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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K3KL3L30CM-BGCT
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View Datasheet →K3KL3L30DM-BGCU
✅ Drop-In📋 Reference alternative (not in catalog)
K3LK4L40DM-BGCT
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$40.5 / Unit
View Datasheet →K3KL6L60GM-MGCT
✅ Drop-In📋 Reference alternative (not in catalog)
K3KL3L30CM-BGCU Maximum Ratings & Electrical Characteristics
| Memory Type | LPDDR5X SDRAM (Volatile DRAM) |
| Memory Size | 64 Gb (8 GB) |
| Data Rate | 8533 Mbps |
| Memory Organization | x64 |
| Technology | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) |
| Package | FBGA-496 (BGCU) |
| Mounting Type | Surface Mount |
| Die Configuration | Stacked multi-die DRAM |
| Interface | LPDDR5X (standard LPDDR ball interface) |
| Application Segment | AI devices and automotive |
| Power Efficiency | Approx. 25% better than previous LPDDR5 generation (per Samsung) |
| Speed Improvement | Up to 1.25x faster than previous generation (per Samsung) |
| Place of Origin (per distributor listing) | Johor, Malaysia |
K3KL3L30CM-BGCU fbga-496 (bgcu) Pin Configuration Guide
Complete pinout information for K3KL3L30CM-BGCU (fbga-496 (bgcu) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K3KL3L30CM-BGCU.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K3KL3L30CM-BGCU is suitable for 6 applications: Flagship Smartphone Main Memory, Automotive ADAS and In-Vehicle Computing, AI Edge Modules and Robotics, Tablet and Notebook Memory Subsystems, High-Resolution Camera and Vision Systems, Networking and 5G Infrastructure Cards.
Flagship Smartphone Main Memory
The K3KL3L30CM-BGCU serves as main system memory alongside flagship application processors, where its 64 Gb (8 GB) capacity and 8533 Mbps data rate deliver the bandwidth demanded by large apps, high-resolution cameras, and on-device AI assistants. Samsung's LPDDR5X material notes up to 1.25x speed and 25% better power efficiency versus LPDDR5, directly extending battery life in burst-heavy mobile workloads. The FBGA-496 stacked-die package minimizes board area beside the SoC. Performance consideration: memory-controller training at the top gear is required; thermal throttling of the DRAM under sustained camera-AI loads should be modeled in the mechanical design.
Recommended
Automotive ADAS and In-Vehicle Computing
Samsung explicitly targets the LPDDR5X family, including the K3KL3L30CM-BGCU, at in-vehicle devices. ADAS domain controllers running multi-camera perception, sensor fusion, and driver-monitoring need multi-GB frame buffers with deterministic bandwidth; the 8533 Mbps x64 interface supplies this within a tight power envelope suitable for fanless automotive ECUs. The 64 Gb density accommodates neural-network weights and HD-map data locally. Design consideration: verify the automotive-qualified ordering variant, temperature grade, and AEC-style qualification documentation with Samsung before design-in, and plan LPDDR5X signal integrity for the harsher automotive EMI environment.
Recommended
AI Edge Modules and Robotics
Edge-AI accelerator modules and autonomous robots load large neural models into local memory; the K3KL3L30CM-BGCU's 8 GB capacity and 8533 Mbps bus reduce model-swapping latency and raise effective inference throughput. Samsung's 25% power-efficiency gain over LPDDR5 matters in battery-powered robots and drones where every watt of DRAM power shortens runtime. Placed on a compact compute module with an LPDDR5X-capable SoC, it minimizes cabling and improves mechanical robustness. Performance consideration: sustained AI inference heats stacked DRAM die; validate junction temperature under worst-case bandwidth utilization and derate the top speed gear if thermal margins are thin.
Recommended
Tablet and Notebook Memory Subsystems
Premium tablets and thin-and-light notebooks use soldered LPDDR5X to save height and power versus DDR5 SO-DIMMs. The K3KL3L30CM-BGCU provides 8 GB per package, so two packages yield 16 GB of dual-channel memory within the footprint of a DIMM slot eliminated from the board. Its 8533 Mbps rate sustains integrated-GPU bandwidth for content creation and gaming. Samsung's efficiency improvement translates into quieter thermal designs and longer untethered runtime. Design consideration: soldered memory is unupgradable, so choose package density to match the product's top configuration, and validate memory-down layout against the SoC vendor's routing guideline.
Recommended
High-Resolution Camera and Vision Systems
Machine-vision and surveillance systems streaming multiple 4K/8K sensors require large line buffers and fast frame staging; the K3KL3L30CM-BGCU's 8533 Mbps x64 interface absorbs sensor bursts without dropping frames, while 8 GB stores multi-second rolling buffers for event capture and AI analytics. Samsung's LPDDR5X power efficiency reduces the thermal load in sealed outdoor camera housings that rely on passive cooling. The FBGA-496 stacked package fits the compact sensor-board envelope. Performance consideration: ensure the image signal processor's memory interface supports LPDDR5X gear rates and that DMA scheduling prevents bus contention between sensor pipelines.
Recommended
Networking and 5G Infrastructure Cards
5G small-cell and edge data-center line cards use LPDDR5X as forwarding-plane and control-plane memory, where per-watt bandwidth drives heat-sink and power-supply sizing. The K3KL3L30CM-BGCU's 8 GB and 8533 Mbps bus support deep packet buffers and lookup tables under high connection counts, and Samsung's efficiency gain over LPDDR5 lowers the card's total power budget. Stacked-die FBGA packaging enables high memory density per square centimeter on dense line cards. Design consideration: confirm 24/7 sustained-operation temperature derating and request long-term supply commitments from Samsung, since infrastructure programs demand multi-year continuity.
Recommended
Recommended Products Summary
Engineering reference data for K3KL3L30CM-BGCU — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K3KL3L30CM-BGCT | K3KL3L30DM-BGCU | K3KL6L60GM-MGCT |
|---|---|---|---|---|
| Package | FBGA-496 (BGCU) | FBGA-496 - same | FBGA-496 - same | FBGA (MGCT variant) - verify ballmap |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 64 Gb (8 GB) | 64 Gb (8 GB) | 64 Gb (8 GB) | 16 Gb (2 GB) |
| Memory Technology | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Max Data Rate | 8533 Mbps | 8533 Mbps | 8533 Mbps | [DATA_NEEDED] |
| Memory Organization | x64 | x64 | x64 | x32 |
| Target Segment | AI and in-vehicle / mobile | Mobile computing | AI / mobile | Mobile / cost-optimized |
| Lifecycle Status | Active | Active | Active | Active |
| Price (qty 1) | RFQ | RFQ | RFQ | RFQ |
Key Differentiators
- Maximum 8 GB capacity in a single package (vs K3KL6L60GM-MGCT)
- Identical silicon with flexible packing (vs K3KL3L30CM-BGCT)
- LPDDR5X efficiency headroom (vs LPDDR5-class devices)
Design Notes
LPDDR5X at 8533 Mbps demands disciplined fly-by routing: keep all DRAM-to-SoC trace lengths matched within the SoC vendor's specified skew window, use controlled impedance (single-ended ~40 ohm typical per LPDDR design practice), and route DQ/DBI bytes over solid reference planes with no splits. Place the FBGA-496 package within a few centimeters of the controller. Run IBIS-ODEM or equivalent channel simulation on the top speed bin before committing the stackup; at 8533 Mbps, via stubs and connector transitions dominate ISI.
LPDDR5X uses multiple rails (VDD, VDD2, VDDQ per the official datasheet) supplied from a PMIC with dynamic voltage-frequency scaling tied to the active gear. Confirm exact rail voltages from the Samsung datasheet rather than assuming LPDDR5 values, since LPDDR5X lowers VDDQ versus LPDDR5 to achieve its 25% efficiency gain. Size the PMIC for simultaneous read/write burst currents on the x64 bus and add bulk plus high-frequency decoupling at each ball group. Sequence rails per the datasheet power-up order to avoid latch-up.
Do not assume cross-vendor LPDDR5X interchangeability: ballmaps, die stacks, and timing sets differ by manufacturer, so treat Micron or SK hynix parts as second sources requiring full re-verification, not drop-ins. Also note the CM vs DM Samsung die-revision suffix can change supported speed bins - always qualify the exact ordering code used in production. Finally, soldered LPDDR5X is not field-upgradable: lock the density decision to the top product SKU early, and confirm controller gear-training support with your SoC vendor before layout freeze.
Compliance Information
Compliance data not published in the provided sources. Samsung typically documents RoHS/REACH status on official product pages; request the compliance declaration from Samsung or the distributor for the exact ordering code.
