K3KL5L50QM-JGCT - 128Gb LPDDR5X 7500Mbps DRAM | Samsung
N.º da peça: K3KL5L50QM-JGCT ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $74.6 | $746,00 |
| 100 | $70.9 | $7.090,00 |
| 500 | $67.4 | $33.700,00 |
| 1.000 | $64 | $64.000,00 |
K3KL5L50QM-JGCT Visão geral
LPDDR5X (Low Power Double Data Rate 5X eXtended) is an enhanced evolution of the LPDDR5 DRAM standard defined by JEDEC. As a class of volatile DRAM within the broader memory hierarchy (LPDDR5X -> LPDDR family -> DRAM -> semiconductor memory), it prioritizes bandwidth-per-watt for battery-powered and thermally constrained compute platforms. Compared with LPDDR5, LPDDR5X raises interface speed and improves power efficiency, making it the dominant main-memory technology for flagship smartphones, tablets, and increasingly for AI accelerators and automotive computing.
Key features of the K3KL5L50QM-JGCT include its 128 Gb monolithic density in a compact 441-ball FBGA footprint, 7500 Mbps (LPDDR5X-7500) interface speed, x64 channel organization suitable for 16-bit channel stacking, and an industrial-extended -25C to +85C operating range. Samsung reports that its premium LPDDR5X generation delivers up to 1.25 times the speed and roughly 25% better power efficiency versus the previous generation.
Technically, the device uses Samsung advanced DRAM process technology with a multi-rail power architecture: VDD1 (1.8 V), VDD2 (1.05 V), VDDQ (0.5 V) and VDDCA/other aux rails, minimizing I/O switching power at multi-gigabit rates. The x64 organization allows SoC memory controllers to aggregate two 32-bit channels for full-bandwidth LPDDR5X operation.
Typical applications include flagship smartphone and tablet main memory, AI edge computing and inference accelerators, in-vehicle infotainment and ADAS compute modules, and high-performance ultra-thin PCs.
Design consideration: because this part is a ball-grid array memory, signal integrity on the command/address and data buses is critical; follow the SoC vendor reference layout for fly-by routing, ODT settings, and power rail sequencing.
This page synthesizes distributor stock, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para K3KL5L50QM-JGCT — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K3KL5L50QM-JGCT (mesmo formato e footprint) — diferindo em Memory Type, Density, Interface, Package, Organization.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K3KL3L30QM-JGCT
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →K3KL2L20DM-JGCT
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$20.8 / unidade
Ver ficha técnica →K3KL1L10GM-JGCT
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$30.9 / unidade
Ver ficha técnica →K3LKCKC0BM-MGCP
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$65.625 / unidade
Ver ficha técnica →K3LKBKB0BM-MGCP
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$46.62 / unidade
Ver ficha técnica →K3KL5L50QM-JGCT Classificações máximas e características elétricas
| Tipo de memória | LPDDR5X DRAM (volatile) |
| Tamanho da memória | 128 Gb (16 GB) |
| Memory Organization | x64 |
| Interface Speed | 7500 Mbps (LPDDR5X-7500) |
| Tipo de interface | LPDDR5X parallel interface |
| Supply Voltage (VDD1) | 1.8 V |
| Supply Voltage (VDD2) | 1.05 V |
| Supply Voltage (VDD2Q/other) | 0.9 V |
| Supply Voltage (VDDQ) | 0.5 V |
| Temperatura de operação | -25C to +85C |
| Encapsulamento | 441-ball FBGA |
| Tipo de montagem | Surface Mount (BGA) |
| Technology | LPDDR5X (JEDEC LPDDR5 extended) |
| Application Class | AI, in-vehicle and mobile devices |
| Product Status | EOL (End of Life) |
Guia de Configuração de Pinos do K3KL5L50QM-JGCT 441-ball fbga
Configuração de pinos para K3KL5L50QM-JGCT (pacote 441-ball fbga). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para K3KL5L50QM-JGCT.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
K3KL5L50QM-JGCT é adequado para 6 aplicaçãos: Flagship Smartphone Main Memory, AI Edge Computing and Inference Accelerators, Automotive ADAS and In-Vehicle Infotainment, Ultra-Thin Laptops and Tablets, Network Appliance and 5G Infrastructure Buffering, Medical and Portable Diagnostic Instruments.
Flagship Smartphone Main Memory
The K3KL5L50QM-JGCT fits flagship smartphone platforms that require 16 GB of main memory with maximum bandwidth-per-watt. Its LPDDR5X-7500 interface at 7500 Mbps per pin, combined with Samsung's roughly 25% power-efficiency improvement over the prior generation, directly extends battery life under heavy multitasking and on-device AI workloads. The 441-ball FBGA footprint minimizes board area in dense smartphone PCB stacks, while the x64 organization lets the application processor aggregate two 32-bit channels. Placed on the SoC reference fly-by topology with on-die termination and DVFS-managed 0.5 V VDDQ, the part sustains multi-gigabit signaling within the -25C to +85C envelope typical of handset thermal designs.
Recomendado
AI Edge Computing and Inference Accelerators
For edge AI modules running large language or vision models, the K3KL5L50QM-JGCT provides 16 GB of working memory at 7500 Mbps, giving inference engines the memory bandwidth needed to stream model weights without starvation. Samsung explicitly targets AI devices with this premium LPDDR5X generation, citing up to 1.25 times the speed of the previous generation. In an edge-inference card, the DRAM connects directly to an SoC or NPU memory controller over short fly-by traces; the four-rail power architecture (1.8 V / 1.05 V / 0.9 V / 0.5 V) allows the PMIC to scale VDDQ dynamically, trading a small bandwidth margin for significant power savings during idle inference periods.
Recomendado
Automotive ADAS and In-Vehicle Infotainment
Distributor data describes the K3KL5L50QM-JGCT as low-power DRAM for AI and in-vehicle devices, and its -25C to +85C operating range covers automotive cabin electronics environments. In ADAS domain controllers and IVI head units, 16 GB of LPDDR5X supports multi-camera sensor fusion, surround-view rendering, and navigation workloads simultaneously. The 441-ball FBGA package withstands automotive vibration profiles when mounted per the SoC supplier's land-pattern recommendation. Designers must verify thermal conditions near the DRAM (self-refresh and active currents generate heat under the BGA) and confirm the automotive qualification grade with Samsung, since AEC-Q100 status is not stated in public listings.
Recomendado
Ultra-Thin Laptops and Tablets
Premium thin-and-light PCs and large tablets adopt LPDDR5X for the same reasons as smartphones: high bandwidth in a low-power, small-footprint package. The K3KL5L50QM-JGCT's 7500 Mbps interface feeds integrated-GPU and CPU memory demand for 16 GB configurations, while its power efficiency (about 25% better than the previous generation per Samsung) directly improves battery runtime in fanless designs. Board designers typically place two packages to form a 128-bit bus on an x64-pair channel layout. Memory-down LPDDR5X also removes SO-DIMM height constraints, enabling slimmer chassis, at the cost of non-upgradeable memory that must be sized correctly at design time.
Recomendado
Network Appliance and 5G Infrastructure Buffering
5G small cells, edge gateways, and network appliances use LPDDR5X as packet-buffer and control-plane memory where DRAM power draw is a significant share of system budget. The K3KL5L50QM-JGCT's 128 Gb density and 7500 Mbps rate handle deep packet buffers and fast table lookups, while the 0.5 V VDDQ rail minimizes I/O power during sustained traffic. The -25C to +85C range suits sealed outdoor enclosures without active cooling. Because network SoCs vary in LPDDR5X support maturity, verify PHY training compatibility and speed-grade support (LPDDR5X-7500) in the chosen network processor before layout, and provision the four-rail PMIC sequencing accordingly.
Recomendado
Medical and Portable Diagnostic Instruments
Portable ultrasound, patient monitors, and handheld diagnostic imagers benefit from the K3KL5L50QM-JGCT's balance of 16 GB capacity, high bandwidth for real-time image pipelines, and low power for battery operation. The 441-ball FBGA package integrates into compact handheld PCBs, and the extended -25C low end accommodates storage and transport conditions beyond typical commercial specs. Image-processing SoCs with LPDDR5X interfaces achieve smooth frame buffering at 7500 Mbps without the power penalty of DDR4 DIMM solutions. Designers should implement the Samsung-recommended self-refresh and power-down modes so the DRAM draws microamp-scale current during standby, preserving battery life in clinical shift-length use.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K3KL5L50QM-JGCT — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K3KL3L30QM-JGCT | K3KL2L20DM-JGCT | K3KL1L10GM-JGCT |
|---|---|---|---|---|
| Package | 441-ball FBGA | 441-ball FBGA (QM) - same family | 441-ball FBGA (DM family) - verify footprint | 441-ball FBGA (GM family) - verify footprint |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 128 Gb | 64 Gb | 32 Gb class | 16 Gb class |
| Technology | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X |
| Organization | x64 | x64 | x32 class - verify | x16 class - verify |
| Supply Voltage Rails | 1.8 / 1.05 / 0.9 / 0.5 V | 1.8 / 1.05 / 0.9 / 0.5 V (LPDDR5X standard) | 1.8 / 1.05 / 0.9 / 0.5 V (LPDDR5X standard) | 1.8 / 1.05 / 0.9 / 0.5 V (LPDDR5X standard) |
Principais diferenciais
- Highest density in the compared family (vs K3KL3L30QM-JGCT)
- Extended low-temperature operation (vs Generic commercial-grade LPDDR5X)
- Same-package lower-cost fallback exists (vs K3KL3L30QM-JGCT)
Notas de projeto
The K3KL5L50QM-JGCT uses four supply rails (1.8 V VDD1, 1.05 V VDD2, 0.9 V aux, 0.5 V VDDQ). Use a PMIC with dedicated LPDDR5X rails and correct power-up sequencing (VDD1/VDD2 before VDDQ per LPDDR5X standard practice) to avoid I/O latch-up. LPDDR5X performs dynamic voltage scaling on VDDQ during operation, so the 0.5 V rail must support fast load transients; place bulk and 0.1 uF ceramic decoupling at each VDDQ ball group. Estimated: at 7500 Mbps with x64 loading, I/O dynamic power dominates, so rail integrity directly limits eye margin.
At LPDDR5X-7500 rates, fly-by CA and data-bus routing must follow the SoC vendor reference design: matched intra-byte-group lengths, controlled impedance (single-ended near 40 ohms on data), and reference-plane continuity under every ball fanout. On-die termination (ODT) settings and read/write training must be re-tuned whenever a different Samsung family member is substituted, since training tables in firmware are die-specific. Do not mix speed grades across channel pairs on a shared memory bus.
The part is EOL per ICAllIn specification data, so new designs should not start on this MPN without a lifecycle plan. Reported stock (about 48,000 pcs at Wolfchip as of Aug 2026) will deplete; secure date-code-consistent lots, insist on original Samsung packaging and authentication for broker-sourced units, and pre-qualify a same-family alternative such as K3KL3L30QM-JGCT for lower-density builds. Also verify AEC-Q100 status directly with Samsung if the end product is automotive - public listings do not state it.
Informações de conformidade
Provided web data does not state RoHS/REACH/AEC-Q100 status for K3KL5L50QM-JGCT. Request formal compliance declarations from Samsung Semiconductor or your franchised distributor.
