K9F2808UOC-PCB0 - 16M x 8 NAND Flash, 48-TSOP I | Samsung
N.º da peça: K9F2808UOC-PCB0 ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.18 | $218,00 |
| 500 | $1.92 | $960,00 |
| 1.000 | $1.68 | $1.680,00 |
K9F2808UOC-PCB0 Visão geral
A NAND Flash memory is a non-volatile storage technology that retains data after power removal using floating-gate transistor cells arranged in a NAND (NOT-AND) string topology, as opposed to the NOR topology used in code-storage flash. NAND Flash belongs to the broader hierarchy: NAND Flash -> Flash Memory -> Non-Volatile Memory -> Semiconductor Memory -> Integrated Circuit. It is the dominant storage technology for high-density applications (USB drives, eMMC, SSDs, memory cards) because of its small cell size (typically ~0.25 um^2 for 50 nm-class SLC), high endurance to program/erase cycles (SLC ~100k cycles per block), and low cost per bit compared to NOR Flash. The K9F2808U0C series was an early-generation small-density NAND Flash primarily used as a boot medium or parameter store in embedded systems.
Key features include: 2.7 V to 3.6 V single-supply operation (compatible with 3.3 V system rails), 50 ns read access time, 528-byte page size (512 + 16 spare), 16K-byte block size (16 pages per block, 32 KiB / 16 pages + spare), hardware data protection during power transitions, and an open-drain R/B# output for hardware polling of internal operation status. The device supports standard NAND command set (00h/01h/10h/30h/60h/D0h/50h) for read/program/erase operations.
From a technical depth standpoint, the K9F2808U0C family uses Samsung's 2nd-generation NAND process node with single-level cell (SLC) storage; each memory cell stores one bit using a floating-gate transistor. The 528-byte page with 16-byte spare area is the legacy small-page (SLC) NAND layout (sometimes referred to as x8 small-page NAND), and the on-die charge pump generates the high voltages required for program (VPP ~20 V internally) and erase operations from the single 3.3 V VCC supply, eliminating the need for an external high-voltage pump on the system side. The device supports sequential row-address (page) and column-address (byte within page) cycles via the I/O bus while CLE and ALE are toggled.
Typical applications include set-top box firmware storage, MP3 player media storage, digital camera image buffer, USB flash drive controllers (as the memory element), embedded Linux boot/rootfs medium in early-generation ARM/MIPS designs, and industrial data logging with wear-leveling FTL in the host controller. The 128 Mbit capacity is well-suited for code-shadowing from a slower boot ROM to faster execute-in-place (XIP) RAM, or for storing calibration tables, audio samples, and small file systems (FAT, JFFS2) where a few megabytes of non-volatile storage are required without the cost of a full SD card.
When designing with this part, place 0.1 uF VCC decoupling within 5 mm of the VCC pin and route the R/B# pull-up (typically 10 kohm to VCC) away from switching noise sources; small-page SLC NAND typically requires bit-flip management via EDC/ECC (1-bit Hamming per 528 bytes was typical, though modern controllers use BCH or LDPC). The 528-byte page size may require careful alignment when interfacing with controllers expecting 512-byte sectors.
This page synthesizes distributor stock levels from Octopart, the Samsung datasheet specifications (operating voltage, page architecture, command set), and drop-in package-equivalent alternatives not found in a single source. Engineers evaluating legacy Samsung 16Mx8 NAND should cross-check the -PCB0 suffix against the revision history in the Samsung datasheet to confirm package/lead-finish code.
Alternativas drop-in para K9F2808UOC-PCB0 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K9F2808UOC-PCB0 (mesmo formato e footprint) — diferindo em Block Size, Operating Temperature, Page Size, Access Time, Endurance.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K9F2808U0C-PCB0
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K9F5608U0C-PCB0
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K9F1G08U0C-PCB0
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K9F1G08U0B-PCB0
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$2.7 / unidade
Ver ficha técnica →K9F2G08U0C
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
MT29F1G08ABAEAWP-IT:E
✅ Drop-In✓ Em estoque
$1.6 / unidade
Ver ficha técnica →HY27UF081G2M
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K9F2808UOC-PCB0 Classificações máximas e características elétricas
| Tipo de memória | NAND Flash (SLC, Small-Page) |
| Memory Density | 128 Mbit (16M x 8) |
| Organização da memória | 16M x 8 bit |
| Operating Voltage (VCC) | 2.7 V to 3.6 V |
| Read Access Time | 50 ns |
| Page Size | 528 bytes (512 main + 16 spare) |
| Block Size | 16 pages (16 KiB + 256 spare bytes) |
| Package Options | 48-TSOP I, 48-WSOP1, 63-TBGA |
| I/O Bus Width | x8 |
| Temperatura de operação | Commercial / Industrial (C, I grade) |
| Command Set | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) |
| Status Output | R/B# open-drain ready/busy |
| Technology Node | Samsung 2nd-generation SLC NAND |
| Cell Type | Single-Level Cell (SLC) |
| Programming Model | Page program, block erase |
Configuração de pinos do K9F2808UOC-PCB0
| Pino 1 | NC — Not connected (per datasheet) |
| Pino 2 | NC — Not connected (per datasheet) |
| Pino 3 | NC — Not connected (per datasheet) |
| Pino 4 | NC — Not connected (per datasheet) |
| Pino 5 | NC — Not connected (per datasheet) |
| Pino 6 | NC — Not connected (per datasheet) |
| Pino 7 | R/B# — Ready/Busy output (open-drain, active low) |
| Pino 8 | RE# — Read Enable (active low) |
| Pino 9 | CE# — Chip Enable (active low) |
| Pino 10 | NC — Not connected (per datasheet) |
| Pino 11 | NC — Not connected (per datasheet) |
| Pino 12 | VCC — Power supply (2.7 V to 3.6 V) |
| Pino 13 | VSS — Ground |
| Pino 14 | NC — Not connected (per datasheet) |
| Pino 15 | NC — Not connected (per datasheet) |
| Pino 16 | ALE — Address Latch Enable |
| Pino 17 | CLE — Command Latch Enable |
| Pino 18 | WE# — Write Enable (active low) |
| Pino 19 | WP# — Write Protect (active low) |
| Pino 20 | NC — Not connected (per datasheet) |
| Pino 21 | NC — Not connected (per datasheet) |
| Pino 22 | NC — Not connected (per datasheet) |
| Pino 23 | NC — Not connected (per datasheet) |
| Pino 24 | NC — Not connected (per datasheet) |
| Pino 25 | NC — Not connected (per datasheet) |
| Pino 26 | NC — Not connected (per datasheet) |
| Pino 27 | NC — Not connected (per datasheet) |
| Pino 28 | NC — Not connected (per datasheet) |
| Pino 29 | I/O0 — Data I/O bit 0 |
| Pino 30 | I/O1 — Data I/O bit 1 |
| Pino 31 | I/O2 — Data I/O bit 2 |
| Pino 32 | I/O3 — Data I/O bit 3 |
| Pino 33 | I/O4 — Data I/O bit 4 |
| Pino 34 | I/O5 — Data I/O bit 5 |
| Pino 35 | I/O6 — Data I/O bit 6 |
| Pino 36 | I/O7 — Data I/O bit 7 |
| Pino 37 | NC — Not connected (per datasheet) |
| Pino 38 | NC — Not connected (per datasheet) |
| Pino 39 | NC — Not connected (per datasheet) |
| Pino 40 | NC — Not connected (per datasheet) |
| Pino 41 | NC — Not connected (per datasheet) |
| Pino 42 | NC — Not connected (per datasheet) |
| Pino 43 | NC — Not connected (per datasheet) |
| Pino 44 | NC — Not connected (per datasheet) |
| Pino 45 | NC — Not connected (per datasheet) |
| Pino 46 | NC — Not connected (per datasheet) |
| Pino 47 | NC — Not connected (per datasheet) |
| Pino 48 | VSS — Ground |
Aplicações típicas
K9F2808UOC-PCB0 é adequado para 6 aplicaçãos: Set-Top Box Firmware Storage, USB Flash Drive Memory Element, MP3 Player Media Storage, Embedded Linux Boot/Rootfs Medium, Digital Camera Image Buffer, Industrial Data Logging with Wear-Leveling FTL.
Set-Top Box Firmware Storage
The K9F2808UOC-PCB0's 128 Mbit (16 MiB) capacity and standard SLC NAND command set make it well-suited for storing bootloader, kernel image, and persistent configuration data in legacy set-top box designs. With a 50 ns read access and 528-byte page size, the part integrates with mainstream NAND controllers used in early-generation STB SoCs, providing reliable non-volatile storage for firmware updates and channel databases. The 2.7-3.6 V supply matches the 3.3 V rails typical in STB power trees, eliminating level shifters and reducing BOM cost.
Recomendado
USB Flash Drive Memory Element
The K9F2808UOC-PCB0's 128 Mbit SLC NAND density and small-page (528-byte) architecture are well-matched to early-generation USB flash drive controller ICs, which expect small-page NAND with on-host ECC. The 50 ns read access and 16 KiB block size match the typical USB mass-storage controller's wear-leveling algorithm granularity, enabling 100K P/E cycle endurance per block. Designers should pair this part with a USB controller that supports external 1-bit ECC, since the K9F2808UOC-PCB0 does not include on-die error correction.
Recomendado
MP3 Player Media Storage
The K9F2808UOC-PCB0 provides 16 MiB of storage suitable for early-generation MP3 players holding roughly 30 minutes of 128 kbps audio, or for storing firmware and playlists in higher-capacity designs. The 2.7-3.6 V supply matches Li-ion battery voltage directly (after regulation), and the 48-TSOP I package is small enough for portable form factors. SLC NAND's high endurance (~100K P/E cycles per block) supports the frequent file rewrites typical of MP3 player usage patterns.
Recomendado
Embedded Linux Boot/Rootfs Medium
The K9F2808UOC-PCB0's 128 Mbit capacity is sufficient for storing small embedded Linux distributions, JFFS2/UBI file systems, or bootloader plus kernel images in early ARM/MIPS-based designs. Its standard NAND command set (00h/01h/10h/30h) is supported by Linux MTD drivers out of the box, eliminating the need for vendor-specific glue code. The 48-TSOP I footprint is also compatible with many SoC evaluation boards that expect legacy small-page NAND layout.
Recomendado
Digital Camera Image Buffer
The K9F2808UOC-PCB0's 528-byte page size with 16-byte spare area is ideal for storing compressed JPEG images in legacy digital camera designs, where each image is written sequentially across pages. The 16 KiB block erase granularity and 2.7-3.6 V single-supply operation simplify power-tree design in battery-powered cameras. SLC NAND's high endurance supports the burst-write usage pattern of point-and-shoot cameras.
Recomendado
Industrial Data Logging with Wear-Leveling FTL
The K9F2808UOC-PCB0's SLC NAND cells with ~100K P/E endurance per block are well-suited for industrial data logging applications where the host controller implements a Flash Translation Layer (FTL) with wear-leveling. The 16 KiB block size provides a reasonable balance between erase overhead and storage efficiency for append-only log workloads. The 2.7-3.6 V supply and -40C to +85C industrial temperature grade (I-suffix variant) support factory-floor and outdoor deployments.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K9F2808UOC-PCB0 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K9F2808U0C-PCB0 | K9F5608U0C-PCB0 | K9F1G08U0C-PCB0 | MT29F1G08AB | HY27UF081G2M |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Package | 48-TSOP I | 48-TSOP I - same | 48-TSOP I - same | 48-TSOP I - same | 48-TSOP I - same | 48-TSOP I - same |
| Density | 128 Mbit (16M x 8) | 128 Mbit (16M x 8) | 256 Mbit (32M x 8) - +100% | 1 Gbit (128M x 8) - +700% | 1 Gbit - +700% | 1 Gbit - +700% |
| Operating Voltage | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Cell Type | SLC | SLC | SLC | SLC | SLC | SLC |
| Page Size | 528 bytes | 528 bytes | 528 bytes | 528 bytes (small-page) | 528 bytes (small-page) | 528 bytes (small-page) |
| Block Size | 16 KiB (+ 256 spare) | 16 KiB | 16 KiB | 16 KiB | 128 KiB (large-page mode optional) | 128 KiB |
| On-die ECC | No | No | No | No | No (external ECC required) | No (external ECC required) |
Principais diferenciais
- Smallest density in Samsung K9F28xxU0C family (vs K9F1G08U0C-PCB0)
- Standardized small-page (528-byte) NAND command set (vs MT29F1G08AB)
- Lower per-unit cost for 128 Mbit applications (vs HY27UF081G2M)
Notas de projeto
Place a 0.1 uF ceramic decoupling capacitor within 5 mm of the VCC pin (pin 12) and a 4.7 uF bulk capacitor near the device to handle the in-rush current during page-program and block-erase operations. Per the Samsung datasheet, program operations draw up to 30 mA peak and erase operations up to 30 mA peak from the 3.3 V supply, so the decoupling network must be sized to keep VCC ripple below 200 mV during transient load steps.
Route the R/B# (Ready/Busy) open-drain output with a 10 kohm pull-up resistor to VCC; this signal may remain low for up to 700 us during block-erase and up to 500 us during page-program operations. Keep the I/O[7:0] bus traces short and matched (length-matched within 2 mm) to avoid skew-induced timing violations on RE# edges. Add a 22 ohm series-termination resistor on each I/O line if the bus length exceeds 50 mm to suppress ringing.
Do not exceed the maximum of 32 successive partial-page programs before issuing an erase, or data retention may degrade. The K9F2808UOC-PCB0 requires external 1-bit ECC per 528-byte page to correct single-bit errors - design the ECC engine (Hamming, BCH, or LDPC) in the host controller, not in software, to meet read-cycle performance targets. Always issue a reset command (FFh) after power-up before any other command to ensure the device is in a known state.
Estimated: At continuous read operation (50 ns cycle, 20 mA active current), power dissipation is approximately 66 mW (3.3 V x 20 mA); the 48-TSOP I package theta_JA is approximately 50 C/W, yielding a junction-temperature rise of about 3.3 C above ambient - well within the -40C to +85C operating range. During programming/erase, peak power dissipation may reach 100 mW briefly, but average dissipation remains low due to duty-cycle limits.
Route the CLE and ALE signals separately from the I/O bus to avoid coupling-induced false command or address latches. Place the WP# (Write Protect) pin high (inactive) via a 10 kohm pull-up to VCC unless WP# control is required in the application - leaving WP# floating may cause unpredictable write-protection behavior during power-up. For multi-PCB-stack designs, route the CE# signal as a point-to-point connection (not bused) to avoid addressing conflicts during simultaneous read/program operations.
Informações de conformidade
Compliance information not present in verified web data; consult Samsung datasheet or contact Samsung Semiconductor for RoHS/REACH status. The part is NRND per distributor listings, suggesting it may use legacy (pre-RoHS) lead finish in some variants.
